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IRFN450[HEXFET power mosfet]

other part :IRF1310S   IRFD214   IRFD224   IRFD310   IRFD320   IRFD420   IRFDC20  

Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. 4.8mm
Logic-Level Gate Drive
RDS(ON) Specified at VGS = 4V & 5V
Fast Switching
Ease of paralleling

International Rectifier
IR

View

IRFNG40[HEXFET power mosfet]

other part :IRF1310S   IRFD214   IRFD224   IRFD310   IRFD320   IRFD420   IRFDC20  

Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. 4.8mm
Logic-Level Gate Drive
RDS(ON) Specified at VGS = 4V & 5V
Fast Switching
Ease of paralleling

International Rectifier
IR

View

IRFN350[HEXFET power mosfet]

other part :IRF1310S   IRFD214   IRFD224   IRFD310   IRFD320   IRFD420   IRFDC20  

Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. 4.8mm
Logic-Level Gate Drive
RDS(ON) Specified at VGS = 4V & 5V
Fast Switching
Ease of paralleling

International Rectifier
IR

View

IRFN054[HEXFET power mosfet]

other part :IRF1310S   IRFD214   IRFD224   IRFD310   IRFD320   IRFD420   IRFDC20  

Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. 4.8mm
Logic-Level Gate Drive
RDS(ON) Specified at VGS = 4V & 5V
Fast Switching
Ease of paralleling

International Rectifier
IR

View

IRFN150[HEXFET power mosfet]

other part :IRF1310S   IRFD214   IRFD224   IRFD310   IRFD320   IRFD420   IRFDC20  

Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. 4.8mm
Logic-Level Gate Drive
RDS(ON) Specified at VGS = 4V & 5V
Fast Switching
Ease of paralleling

International Rectifier
IR

View

IRFN340[HEXFET power mosfet]

other part :IRF1310S   IRFD214   IRFD224   IRFD310   IRFD320   IRFD420   IRFDC20  

Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. 4.8mm
Logic-Level Gate Drive
RDS(ON) Specified at VGS = 4V & 5V
Fast Switching
Ease of paralleling

International Rectifier
IR

View

IRFN044[HEXFET power mosfet]

other part :IRF1310S   IRFD214   IRFD224   IRFD310   IRFD320   IRFD420   IRFDC20  

Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. 4.8mm
Logic-Level Gate Drive
RDS(ON) Specified at VGS = 4V & 5V
Fast Switching
Ease of paralleling

International Rectifier
IR

View

IRFN140[HEXFET power mosfet]

other part :IRF1310S   IRFD214   IRFD224   IRFD310   IRFD320   IRFD420   IRFDC20  

Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. 4.8mm
Logic-Level Gate Drive
RDS(ON) Specified at VGS = 4V & 5V
Fast Switching
Ease of paralleling

International Rectifier
IR

View

IRFNG50[HEXFET power mosfet]

other part :IRF1310S   IRFD214   IRFD224   IRFD310   IRFD320   IRFD420   IRFDC20  

Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. 4.8mm
Logic-Level Gate Drive
RDS(ON) Specified at VGS = 4V & 5V
Fast Switching
Ease of paralleling

International Rectifier
IR

View

IRFN250[HEXFET power mosfet]

other part :IRF1310S   IRFD214   IRFD224   IRFD310   IRFD320   IRFD420   IRFDC20  

Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. 4.8mm
Logic-Level Gate Drive
RDS(ON) Specified at VGS = 4V & 5V
Fast Switching
Ease of paralleling

International Rectifier
IR

View
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