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IRFP

  

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IRFP250[200V N-Channel MOSFET]

other part :IRFP250B   IRFP250BFP001  

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.

Features
• 32A, 200V, RDS(on)= 0.085Ω@VGS= 10 V
• Low gate charge ( typical 95 nC)
• Low Crss ( typical 75 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

Fairchild Semiconductor
Fairchild

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IRFP252[HEXFET TRANSISTORS]

other part :IRFP250   IRFP251   IRFP253  

International Rectifier
IR

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IRFPE40_2008[Power MOSFET]

other part :SIHFPE40_2008   IRFPE450PBF_2008   SIHFPE450-E3_2008   IRFPE450_2008   SIHFPE450_2008  

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available

Vishay Semiconductors
Vishay

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IRFP240[Power MOSFET]

other part :IRFP240PBF   SIHFP240   SIHFP240-E3  

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available

Kersemi Electronic Co., Ltd.
KERSEMI

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IRFP344[HEXFET® Power MOSFET]


International Rectifier
IR

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IRFP250[N-CHANNEL 200V - 0.073Ω - 33A TO-247 PowerMesh™II MOSFET]

DESCRIPTION
The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

■ TYPICAL RDS(on) = 0.073Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLIES (UPS)
■ DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT

STMicroelectronics
ST-Microelectronics

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IRFP253[N-CHANNEL POWER MOSFETS]

other part :IRFP250   IRFP251   IRFP252  

Samsung
Samsung

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IRFP140_2008[Power MOSFET]

other part :IRFP140PBF_2008   SIHFP140-E3_2008   SIHFP140_2008  

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247AC package is preferred for
commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available

Vishay Semiconductors
Vishay

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IRFP360[Avalanche-Energy-Rated N-Channel Power MOSFETs]

other part :IRFP362  

The IRFP360 and IRFP362 are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of opera tion These are n-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits
The IRFP-types are supplied in the JEDEC TO-247 plastic package.

Features:
• Single pulse avalanche energy rated
• SOA ispower-dissipation /imited
• Nanosecond switching speeds
• Linear transfer characteristics
• High input impedance

New Jersey Semiconductor
NJSEMI

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IRFP250[N-Channel MOSFET Transistor]

DESCRIPTION
· Designed for use in switch mode power supplies and general purpose applications.

FEATURES
· Drain Current –ID= 33A@ TC=25℃
· Drain Source Voltage-
   : VDSS= 200V(Min)
· Static Drain-Source On-Resistance
   : RDS(on) = 0.085Ω(Max)
· Fast Switching

Inchange Semiconductor
Iscsemi

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