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IRFS250[200V N-Channel MOSFET]

other part :IRFS250B  

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.

Features
• 21.3A, 200V, RDS(on) = 0.085Ω @VGS = 10 V
• Low gate charge ( typical 95 nC)
• Low Crss ( typical 75 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

Fairchild Semiconductor
Fairchild

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IRFS530[Advanced Power MOSFET]

other part :IRFS530A  

FEATURES
■ Avalanche Rugged Technology
■ Rugged Gate Oxide Technology
■ Lower Input Capacitance
■ Improved Gate Charge
■ Extended Safe Operating Area
■ 175°C Operating Temperature
■ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V
■ Lower RDS(ON) : 0.092 Ω (Typ.)

 

 

Fairchild Semiconductor
Fairchild

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IRFS640[200V N-Channel MOSFET]

other part :IRF640B   IRFS640B  

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.

Features
• 18A, 200V, RDS(on)= 0.18Ω@VGS= 10 V
• Low gate charge ( typical 45 nC)
• Low Crss ( typical 45 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

Fairchild Semiconductor
Fairchild

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IRFS840[500V N-Channel MOSFET]

other part :IRF840B   IRF840BF   IRFS840B   IRFS840BF  

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.

Features
• 8.0A, 500V, RDS(on) = 0.8Ω @VGS = 10 V
• Low gate charge ( typical 41 nC)
• Low Crss ( typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

 

Fairchild Semiconductor
Fairchild

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IRFS654[250V N-Channel MOSFET]

other part :IRF654B   IRF654BFP001   IRFS654B  

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.

Features
• 21A, 250V, RDS(on) = 0.14Ω @VGS = 10 V
• Low gate charge ( typical 95 nC)
• Low Crss ( typical 60 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

 

Fairchild Semiconductor
Fairchild

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IRFS641[N-CHANNEL POWER MOSFETS]

other part :IRFS640  

Samsung
Samsung

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IRFS640[N-CHANNEL POWER MOSFETS]

other part :IRFS641  

Samsung
Samsung

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IRFS720[400V N-Channel MOSFET]

Fairchild Semiconductor
Fairchild

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IRFS450[500V N-Channel MOSFET]

Fairchild Semiconductor
Fairchild

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IRFS510[Advanced Power MOSFET]

Fairchild Semiconductor
Fairchild

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