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IRFW[(IRFR310A / IRFU310A) Advanced Power MOSFET]

Fairchild Semiconductor
Fairchild

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IRFW540[Advanced Power MOSFET]

other part :IRFI540   IRFI540A   IRFW/I540A   IRFW540A   IRFW540ATM  

FEATURES
● Avalanche Rugged Technology
● Rugged Gate Oxide Technology
● Lower Input Capacitance
● Improved Gate Charge
● Extended Safe Operating Area
● 175℃ Operating Temperature
● Lower Leakage Current : 10 μA (Max.) @ VDS = 100V
● Lower RDS(ON) : 0.041 Ω (Typ.)

Fairchild Semiconductor
Fairchild

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IRFW840[500V N-Channel MOSFET]

other part :IRFI840B   IRFW840B  

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.

Features
• 8.0A, 500V, RDS(on) = 0.8Ω @VGS = 10 V
• Low gate charge ( typical 41 nC)
• Low Crss ( typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

 

Fairchild Semiconductor
Fairchild

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IRFW640[N-Channel MOSFET]

Fairchild Semiconductor
Fairchild

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IRFW740[Advanced Power MOSFET]

Fairchild Semiconductor
Fairchild

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IRFW630[N-Channel MOSFET]

Fairchild Semiconductor
Fairchild

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IRFW730[Advanced Power MOSFET]

Fairchild Semiconductor
Fairchild

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IRFW720[Advanced Power MOSFET]

Fairchild Semiconductor
Fairchild

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IRFW710[Advanced Power MOSFET]

Fairchild Semiconductor
Fairchild

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IRFW740B[400V N-Channel MOSFET]

other part :IRFI740B  

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.

Features
• 10A, 400V, RDS(on) = 0.54Ω @VGS = 10 V
• Low gate charge ( typical 41 nC)
• Low Crss ( typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

 

Fairchild Semiconductor
Fairchild

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