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MCR8N

  

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MCR8N[Silicon Controlled Rectifiers Reverse Blocking Thyristors]

other part :MCR8NG  

Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half−wave, silicon gate−controlled devices are needed.

Features
• Blocking Voltage of 600 thru 800 Volts
• On−State Current Rating of 8 Amperes RMS at 80°C
• High Surge Current Capability − 80 Amperes
• Rugged, Economical TO−220AB Package
• Glass Passivated Junctions for Reliability and Uniformity
• Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design
• High Immunity to dv/dt − 100 V/sec Minimum at 125°C
• Pb−Free Packages are Available*

ON Semiconductor
ON-Semiconductor

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MCR8N[Silicon Controlled Rectifiers Reverse Blocking Thyristors]

other part :MCR8   MCR8D   MCR8M  

Designed primarily for half–wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half–wave, silicon gate–controlled devices are needed.

• Blocking Voltage to 800 Volts
• On-State Current Rating of 8 Amperes RMS
• High Surge Current Capability — 80 Amperes
• Industry Standard TO–220AB Package for Ease of Design
• Glass Passivated Junctions for Reliability and Uniformity

Motorola => Freescale
Motorola

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MCR8N[SILICON CONTROLLED RECTIFIERS]

other part :MCR8D   MCR8M  

SILICON CONTROLLED RECTIFIERS

Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Digitron Semiconductors
DIGITRON

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MCR8N[Silicon Controlled Rectifiers Reverse Blocking Thyristors]

other part :MCR8M  

Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half–wave, silicon gate–controlled devices are needed.

• Blocking Voltage of 600 thru 800 Volts
• On–State Current Rating of 8 Amperes RMS at 80°C
• High Surge Current Capability — 80 Amperes
• Rugged, Economical TO220AB Package
• Glass Passivated Junctions for Reliability and Uniformity
• Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design
• High Immunity to dv/dt — 100 V/µsec Minimum at 125°C
• Device Marking: Logo, Device Type, e.g., MCR8N, Date Code

Kersemi Electronic Co., Ltd.
KERSEMI

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MCR8NG[Silicon Controlled Rectifiers Reverse Blocking Thyristors]

other part :MCR8N  

Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half−wave, silicon gate−controlled devices are needed.

Features
• Blocking Voltage of 600 thru 800 Volts
• On−State Current Rating of 8 Amperes RMS at 80°C
• High Surge Current Capability − 80 Amperes
• Rugged, Economical TO−220AB Package
• Glass Passivated Junctions for Reliability and Uniformity
• Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design
• High Immunity to dv/dt − 100 V/sec Minimum at 125°C
• Pb−Free Packages are Available*

ON Semiconductor
ON-Semiconductor

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