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N05L

  

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RFG50N05L[50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs]

other part :RFP50N05L   RFP50N05L9A  

These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V - 5V range, thereby facilitating true on-off power control directly from integrated circuit supply voltages.

Features
• 50A, 50V
• rDS(ON) = 0.022Ω
• UIS SOA Rating Curve (Single Pulse)
• Design Optimized for 5V Gate Drive
• Can be Driven Directly from CMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount
      Components to PC Boards”

Fairchild Semiconductor
Fairchild

View

RFP50N05L[50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs]

other part :RFG50N05L   RFP50N05L9A  

These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V - 5V range, thereby facilitating true on-off power control directly from integrated circuit supply voltages.

Features
• 50A, 50V
• rDS(ON) = 0.022Ω
• UIS SOA Rating Curve (Single Pulse)
• Design Optimized for 5V Gate Drive
• Can be Driven Directly from CMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount
      Components to PC Boards”

Fairchild Semiconductor
Fairchild

View

RFG50N05L[50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs]

other part :RFP50N05L   RFP50N05L9A  

These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V - 5V range, thereby facilitating true on-off power control directly from integrated circuit supply voltages.

Features
• 50A, 50V
• rDS(ON) = 0.022Ω
• UIS SOA Rating Curve (Single Pulse)
• Design Optimized for 5V Gate Drive
• Can be Driven Directly from CMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount
      Components to PC Boards”

Intersil
Intersil

View

RFP50N05L[50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs]

other part :RFG50N05L   RFP50N05L9A  

These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V - 5V range, thereby facilitating true on-off power control directly from integrated circuit supply voltages.

Features
• 50A, 50V
• rDS(ON) = 0.022Ω
• UIS SOA Rating Curve (Single Pulse)
• Design Optimized for 5V Gate Drive
• Can be Driven Directly from CMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount
      Components to PC Boards”

Intersil
Intersil

View

STP15N05L[N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR]

other part :STD12N05   STD12N06   STD3N30-1   STD3N30L-1   STH6N100   STH6N100FI   STK22N05  

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDS(on)= 0.045Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ LOGIC LEVEL COMPATIBLE INPUT
■ 175oC OPERATING TEMPERATURE
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ REGULATORS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)

STMicroelectronics
ST-Microelectronics

View

STP36N05L[N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR]

other part :STD12N05   STD12N06   STD3N30-1   STD3N30L-1   STH6N100   STH6N100FI   STK22N05  

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDS(on)= 0.045Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ LOGIC LEVEL COMPATIBLE INPUT
■ 175oC OPERATING TEMPERATURE
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ REGULATORS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)

STMicroelectronics
ST-Microelectronics

View

SPD13N05L[SIPMOS® Power Transistor]

other part :Q67040-S4115-A2   Q67040-S4123   SPD14N05   SPD21N05L   SPD23N05L   SPD28N05L   SPD31N05  

SIPMOSPower Transistor

Features
•N channel
•Enhancement mode
•Avalanche rated
•dv/dtrated
•175˚C operating temperature

Infineon Technologies
Infineon

View

SPD21N05L[SIPMOS® Power Transistor]

other part :Q67040-S4115-A2   Q67040-S4123   SPD13N05L   SPD14N05   SPD23N05L   SPD28N05L   SPD31N05  

SIPMOSPower Transistor

Features
•N channel
•Enhancement mode
•Avalanche rated
•dv/dtrated
•175˚C operating temperature

Infineon Technologies
Infineon

View

SPD23N05L[SIPMOS® Power Transistor]

other part :Q67040-S4115-A2   Q67040-S4123   SPD13N05L   SPD14N05   SPD21N05L   SPD28N05L   SPD31N05  

SIPMOSPower Transistor

Features
•N channel
•Enhancement mode
•Avalanche rated
•dv/dtrated
•175˚C operating temperature

Infineon Technologies
Infineon

View

SPD28N05L[SIPMOS® Power Transistor]

other part :Q67040-S4115-A2   Q67040-S4123   SPD13N05L   SPD14N05   SPD21N05L   SPD23N05L   SPD31N05  

SIPMOSPower Transistor

Features
•N channel
•Enhancement mode
•Avalanche rated
•dv/dtrated
•175˚C operating temperature

Infineon Technologies
Infineon

View
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