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NDS8947[Dual P-Channel Enhancement Mode Field Effect Transistor]

General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
■ -4A, -30V. RDS(ON) = 0.065W @ VGS = -10V
                    RDS(ON) = 0.1W @ VGS = -4.5V.
■ High density cell design for extremely low RDS(ON).
■ High power and current handling capability in a widely used
    surface mount package.
■ Dual MOSFET in surface mount package.

Fairchild Semiconductor


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System  Voltage  Analog  Audio  Axial  Battery  Bipolar  Bridge  Camera  Chip  Clock  Color  Connector  Control  Controller  Converter  Counter  Crystal  Decoder  Digital 

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