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NTE17

  

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Match, Like NTE17 NTE170 NTE171 NTE175 NTE176 NTE177 NTE179
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NTE17[Integrated Circuit TV Tuner Band Selector]

NTE Electronics
NTE-Electronic

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NTE17[Silicon complementary PNP transistor. Low noise, general purpose amplifier.]

NTE Electronics
NTE-Electronic

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NTE176[Germaniun PNP Transistor Audio Power Amplifier]

NTE Electronics
NTE-Electronic

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NTE177[General Purpose Silicon Rectifier]

Description:
The NTE177 is a general purpose silicon rectifier in a DO35 case designed for switching applications.

 

NTE Electronics
NTE-Electronic

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NTE179[Germanium PNP Transistor Audio Power Amplifier, High Current Switch]

Description:
The NTE179 is a PNP type germainum transistor in a TO3 type case designed for high–current switching applications requiring low saturation voltages, fast switching times, and good safe operating conditions.

Features:
• Low Collector–Emitter Saturation Voltage:
   VCE(sat) = 0.5V (Max) @ IC = 5A

 

NTE Electronics
NTE-Electronic

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NTE170[Single Phase Bridge Rectifier 2.0 Amp]

other part :NTE166   NTE167   NTE168   NTE169  

Features:
• Ideal for Printed Circuit Board
• Surge Overload Rating: 50A (Peak)

 

NTE Electronics
NTE-Electronic

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NTE171[Silicon NPN Transistor Audio/Video Amplifier]

Description:
The NTE171 is a silicon NPN transistor in a TO202 type case designed for high–voltage TV video and chroma output circuits, high–voltage linear amplifiers, and high–voltage transistor regulators.

Features:
• High Collector–Emitter Breakdown Voltage Voltage: V(BR)CER = 300V @ IC = 1mA
• Low Collector–Base Capacitance: Ccb = 3pF Max @ VCB = 20V

 

NTE Electronics
NTE-Electronic

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NTE175[Silicon Complementary Transistors High Voltage, Medium Power Switch]

other part :NTE38  

Description:
The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high–speed switching and linear amplifier applications for high–voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers.

Features:
• Collector–Emitter Sustaining Voltage:
   NTE38: VCEO(sus) = 350V @ IC = 200mA
   NTE175: VCEO(sus) = 300V @ IC = 200mA
• Second Breakdown Collector Current:
   NTE38 IS/b = 875mA @ VCE = 40V
   NTE175 IS/b = 350mA @ VCE = 100V
• Usable DC Current Gain to 2.0Adc

 

NTE Electronics
NTE-Electronic

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NTE177[General Purpose Silicon Rectif]

NTE Electronics
NTE-Electronic

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NTE179[Germanium PNP Transistor Audio]

NTE Electronics
NTE-Electronic

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