Qdatasheet_Logo    Integrated circuits, Transistor, Semiconductors Search and Free Datasheet PDF Download Site
Part Number :
Home  >>>  PI7 Datasheet

PI7

  

Datasheet PDF

Match, Like N/A
Start with PI74* PI7C*
End *7PI7 *8PI7 *0PI7 *6PI7 *API7 *5PI7 *OPI7
Included *PI70*

BS62LV1027PI70[Very Low Power CMOS SRAM 128K X 8 bit]

other part :BS62LV1027   BS62LV1027DC   BS62LV1027DC55   BS62LV1027DC70   BS62LV1027DCG55   BS62LV1027DCG70   BS62LV1027DCP55  

DESCRIPTION
The BS62LV1027 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 by 8 bits and operates form a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical CMOS standby current of 0.02uA at 3.0V/25OC and maximum access time of 55ns at 3.0V/85OC.

FEATURES
 Wide VCC operation voltage : 2.4V ~ 5.5V
 Very low power consumption :
      VCC = 3.0V Operation current : 18mA (Max.) at 55ns
                                                2mA (Max.) at 1MHz
                      Standby current : 0.02uA (Typ.)at 25 OC
      VCC = 5.0V Operation current : 47mA (Max.) at 55ns
                                               10mA (Max.) at 1MHz
                      Standby current : 0.4uA (Typ.) at 25OC
 High speed access time :
   -55 55ns (Max.) at VCC : 3.0~5.5V
   -70 70ns (Max.) at VCC : 2.7~5.5V
 Automatic power down when chip is deselected
 Easy expansion with CE2, CE1 and OE options
 Three state outputs and TTL compatible
 Fully static operation
 Data retention supply voltage as low as 1.5V

 

Brilliance Semiconductor
BSI

View

BS62LV1028PI70[Very Low Power/Voltage CMOS SRAM 128K X 8 bit]

other part :BS62LV1028   BS62LV1028DC   BS62LV1028DC55   BS62LV1028DC70   BS62LV1028DCG55   BS62LV1028DCG70   BS62LV1028DCP55  

DESCRIPTION
The BS62LV1028 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 8 bits and operates from a wide range of 2.4V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.1uA at 3V/25oC and maximum access time of 55ns at 3V/85°C.
Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state output drivers. The BS62LV1028 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS62LV1028 is available in DICE form , JEDEC standard 32 pin 450mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP, 8mmx13.4 mm STSOP and 8mmx20mm TSOP.

FEATURES
• Wide Vcc operation voltage : 2.4V ~ 3.6V
• Very low power consumption :
   Vcc = 3.0V C-grade : 17mA (@55ns) operating current
                  I- grade : 18mA (@55ns) operating current
                  C-grade : 14mA (@70ns) operating current
                  I- grade : 15mA (@70ns) operating current
                  0.1uA (Typ.) CMOS standby current
• High speed access time :
   -55 55ns
   -70 70ns
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE2, CE1, and OE options

 

Brilliance Semiconductor
BSI

View

BS62LV1600PI70[Very Low Power CMOS SRAM 2M X 8 bit]

other part :BS62LV1600   BS62LV1600EC   BS62LV1600EC-55   BS62LV1600EC-70   BS62LV1600ECG55   BS62LV1600ECG70   BS62LV1600ECP55  

DESCRIPTION
The BS62LV1600 is a high performance, very low power CMOS Static Random Access Memory organized as 2048K by 8 bits and operates form a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical CMOS standby current of 1.5uA at 3.0V/25OC and maximum access time of 55ns at 3.0V/85OC.

FEATURES
Wide VCC operation voltage : 2.4V ~ 5.5V
Very low power consumption :
      VCC = 3.0V Operation current : 46mA (Max.)at 55ns
                                              2mA (Max.)at 1MHz
                       Standby current : 1.5uA (Typ.) at 25 OC
      VCC = 5.0V Operation current : 115mA (Max.)at 55ns
                                              10mA (Max.)at 1MHz
                        Standby current : 6.0uA (Typ.) at 25OC
High speed access time :
   -55 55ns (Max.) at VCC : 3.0~5.5V
   -70 70ns (Max.) at VCC : 2.7~5.5V
Automatic power down when chip is deselected
Easy expansion with CE1, CE2 and OE options
Three state outputs and TTL compatible
Fully static operation
Data retention supply voltage as low as 1.5V

 

Brilliance Semiconductor
BSI

View

BS62LV256PI70[VeryLow Power CMOS SRAM 32K X 8 bit]

other part :BS62LV256   BS62LV256DC55   BS62LV256DC70   BS62LV256DCG55   BS62LV256DCG70   BS62LV256DCP55   BS62LV256DCP70  

DESCRIPTION
TheBS62L V256 is a high performance,very low power CMOS Static Random  Access  Memory  organized  as  32,768  by  8  bits  and operates form a wide range of 2.4V to 5.5V supply voltage.
Advanced  CMOS  technology  and  circuit  techniques  provide  both high  speed  and  low  power  features  with  typical  CMOS  standby current  of  0.01uA  and  maximum  access  time  of  70ns  in  3.0V operation.

FEATURES
Wide VCC operation voltage : 2.4V ~ 5.5V
Very low powerconsumption:
    VCC = 3.0V  Operationcurrent :  25mA (Max.)  at 70ns
                                               1mA (Max.)  at 1MHz
                     Standby current :  0.01uA(Typ.) at 25OC
   VCC = 5.0V  Operationcurrent :  40mA (Max.)  at 55ns
                                              2mA (Max.)  at 1MHz
                     Standby current :  0.4uA (Typ.)  at 25OC
Highspeed access time:
  -55  55ns(Max.) at VCC: 4.5~5.5V
  -70  70ns(Max.) at VCC: 3.0~5.5V
Automatic power down whenchip is deselected
Easy expansion with CE and OE options
Threestate outputs and TTLcompatible
Fully static operation
Data retentionsupply voltage as low as 1.5V

Brilliance Semiconductor
BSI

View

BS62LV4007PI70[Very Low Power/Voltage CMOS SRAM 512K X 8 bit]

other part :BS62LV4007   BS62LV4007EC   BS62LV4007EC-55   BS62LV4007EC-70   BS62LV4007EC55   BS62LV4007EC70   BS62LV4007ECG55  

DESCRIPTION
The BS62LV4007 is a high performance, very low power CMOS Static Random Access Memory organized as 524,288 words by 8 bits and operates from a range of 4.5V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 2.0uA at 5.0V/25oC and maximum access time of 55ns at 5.0V/85oC.

FEATURES
• Vcc operation voltage : 4.5V ~ 5.5V
• Very low power consumption :
   Vcc = 5.0V C-grade: 68mA (@55ns) operating current
                   I -grade: 70mA (@55ns) operating current
                   C-grade: 58mA (@70ns) operating current
                   I -grade: 60mA (@70ns) operating current
                   2.0uA (Typ.) CMOS standby current
• High speed access time :
   -55 55ns
   -70 70ns
• Automatic power down when chip is deselected
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• Three state outputs and TTL compatible

 

Brilliance Semiconductor
BSI

View

CS18LV02565API70[High Speed Super Low Power SRAM]

other part :CS18LV02565   CS18LV02565AAC-55   CS18LV02565AAC-70   CS18LV02565AAC55   CS18LV02565AAC70   CS18LV02565AACR55   CS18LV02565AACR70  

[CHIPLUS]

GENERAL DESCRIPTION
The CS18LV02565 is a high performance, high speed and super low power CMOS Static Random Access Memory organized as 32,768 words by 8bits and operates for a single 4.5 to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed, super low power features and maximum access time of 55/70ns in 5.0V operation. Easy memory expansion is provided by an active LOW chip enable (/CE) and active LOW output enable (/OE).

FEATURES
Wide operation voltage : 4.5 ~ 5.5V
Ultra low power consumption : 2mA@1MHz (Max.) , Vcc=5.0V.
                                          1.0 uA (Typ.) CMOS standby current
High speed access time : 55/70ns.
Automatic power down when chip is deselected.
Three state outputs and TTL compatible.
Data retention supply voltage as low as 1.5V.
Easy expansion with /CE and /OE options.

Unspecified
ETC1

View

CS18LV02565PI70[High Speed Super Low Power SRAM]

other part :CS18LV02565   CS18LV02565AAC-55   CS18LV02565AAC-70   CS18LV02565AAC55   CS18LV02565AAC70   CS18LV02565AACR55   CS18LV02565AACR70  

[CHIPLUS]

GENERAL DESCRIPTION
The CS18LV02565 is a high performance, high speed and super low power CMOS Static Random Access Memory organized as 32,768 words by 8bits and operates for a single 4.5 to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed, super low power features and maximum access time of 55/70ns in 5.0V operation. Easy memory expansion is provided by an active LOW chip enable (/CE) and active LOW output enable (/OE).

FEATURES
Wide operation voltage : 4.5 ~ 5.5V
Ultra low power consumption : 2mA@1MHz (Max.) , Vcc=5.0V.
                                          1.0 uA (Typ.) CMOS standby current
High speed access time : 55/70ns.
Automatic power down when chip is deselected.
Three state outputs and TTL compatible.
Data retention supply voltage as low as 1.5V.
Easy expansion with /CE and /OE options.

Unspecified
ETC1

View

BS62LV4006PI70[Low Power/Voltage CMOS SRAM 512K X 8 bit]

Brilliance Semiconductor
BSI

View

OPI7002[Optically coupled isolator]

other part :OPI123   OPI150   OPI150TX   OPI150TXV   OPI153   OPI7010   OPI7340  

Optek Technology
Optek

View

OPI7010[Optically coupled isolator]

other part :OPI123   OPI150   OPI150TX   OPI150TXV   OPI153   OPI7002   OPI7340  

Optek Technology
Optek

View
1


Key Word
System  Voltage  Analog  Audio  Axial  Battery  Bipolar  Bridge  Camera  Chip  Clock  Color  Connector  Control  Controller  Converter  Counter  Crystal  Decoder  Digital 

@ 2014 - 2018  [ Home ] [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]