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IRFS630B[200V N-Channel MOSFET]

other part :IRF630B  

General Description
These N-Channel enhancement mode power field effect transistors are produced using Kersemi proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.

Features
• 9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V
• Low gate charge ( typical 22 nC)
• Low Crss ( typical 22 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

Kersemi Electronic Co., Ltd.
KERSEMI

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IRFS630BFP001[200V N-Channel MOSFET]

other part :IRF630BTSTU_FP001   IRF630B_FP001   IRF630B   IRFS630B   IRF630BFP001   IRF630BTSTUFP001  

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.

Features
• 9.0A, 200V, RDS(on)= 0.4Ω@VGS= 10 V
• Low gate charge ( typical 22 nC)
• Low Crss ( typical 22 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

Fairchild Semiconductor
Fairchild

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IRFS630B[200V N-Channel MOSFET]

other part :IRF630BTSTU_FP001   IRF630B_FP001   IRF630B   IRF630BFP001   IRF630BTSTUFP001   IRFS630BFP001  

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.

Features
• 9.0A, 200V, RDS(on)= 0.4Ω@VGS= 10 V
• Low gate charge ( typical 22 nC)
• Low Crss ( typical 22 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

Fairchild Semiconductor
Fairchild

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IRFS644B[250V N-Channel MOSFET]

other part :IRF644   IRF644B  

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converter and switch mode power supplies.

Features
• 14A, 250V, RDS(on) = 0.28Ω @VGS = 10 V
• Low gate charge ( typical 47 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

Fairchild Semiconductor
Fairchild

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