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RG1

  

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Match, Like RG10 RG1A RG1B RG1C RG1D RG1G RG1J RG1K RG1M
Start with RG1-* RG1.* RG1/* RG10* RG16* RG1A* RG1B* RG1C* RG1D* RG1G* RG1J* RG1K* RG1M* RG1T*
End *1RG1 *TRG1 *5RG1 *9RG1 *2RG1 *YRG1 *-RG1 *CRG1 *ERG1 *HRG1 *URG1 *PRG1 *XRG1 *8RG1
Included *RG10* *RG11* *RG15* *RG1B* *RG1C* *RG1E* *RG1G* *RG1N* *RG1R* *RG1U* *RG1Y*

RG1C[Plastic Ultra-Fast Recover Rectifier]

Reverse Voltage 1000V
Forward Current 0.7A

Features
• Low reverse leakage
• High forward surge capability
• High temperature soldering guaranteed: 260℃/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension
• Lead and body according with RoHS standard

 

Rugao Dachang Electronics Co., Ltd
DACHANG

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RG1C[ULTRA FAST RECOVERY RECTIFIER DIODES]

VOLTAGE RANGE: 1000V
CURRENT: 0.7 A

Features
• High current capability
• High surge current capability
• High reliability
• Low reverse current
• Low forward voltage drop
• Fast switching for high efficiency

SUNMATE electronic Co., LTD
SUNMATE

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RG10[Ultra-Fast-Recovery Rectifier Diodes 400V]

other part :AG01   AL01   EG01   EG1   EL1   FMG-14R   FMG-14S  

Unspecified
ETC

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RG1M[GLASS PASSIVATED FAST SWITCHING RECTIFIER / RG1A THRU RG1M]

other part :RG1A   RG1B   RG1D   RG1G   RG1J   RG1K  

* High temperature metallurgically bonded construction

* Hermetically sealed package
 
* Glass passivated cavity-free junction

* 1.0 Ampere operation at TA=55°C with no thermal runaway

* Typical IRless than 0.1µA

* Capable of meeting environmental standards of MIL-S-19500

*  Fast switching for high efficiency

General Semiconductor
General

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RG1B[Fast Sinterglass Diode / RG1A to RG1M Series]

other part :RG1A   RG1D   RG1G   RG1J   RG1K   RG1M  

• High temperature metallurgically bonded construction

• Hermetically sealed package

• Cavity-free glass passivated junction

• 1.0 ampere operation at Tamb = 55 °C with no thermal runaway

• Fast switching for high efficiency

Vishay Semiconductors
Vishay

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RG1D[Fast Sinterglass Diode / RG1A to RG1M Series]

other part :RG1A   RG1B   RG1G   RG1J   RG1K   RG1M  

• High temperature metallurgically bonded construction

• Hermetically sealed package

• Cavity-free glass passivated junction

• 1.0 ampere operation at Tamb = 55 °C with no thermal runaway

• Fast switching for high efficiency

Vishay Semiconductors
Vishay

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RG1K[GLASS PASSIVATED FAST SWITCHING RECTIFIER / RG1A THRU RG1M]

other part :RG1A   RG1B   RG1D   RG1G   RG1J   RG1M  

* High temperature metallurgically bonded construction

* Hermetically sealed package
 
* Glass passivated cavity-free junction

* 1.0 Ampere operation at TA=55°C with no thermal runaway

* Typical IRless than 0.1µA

* Capable of meeting environmental standards of MIL-S-19500

*  Fast switching for high efficiency

General Semiconductor
General

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RG1J[GLASS PASSIVATED FAST SWITCHING RECTIFIER / RG1A THRU RG1M]

other part :RG1A   RG1B   RG1D   RG1G   RG1K   RG1M  

* High temperature metallurgically bonded construction

* Hermetically sealed package
 
* Glass passivated cavity-free junction

* 1.0 Ampere operation at TA=55°C with no thermal runaway

* Typical IRless than 0.1µA

* Capable of meeting environmental standards of MIL-S-19500

*  Fast switching for high efficiency

General Semiconductor
General

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RG1C[Silicon Rectifier Diode]

Scope
The present specifications shall apply to an RG1C.

Outline
• High : Frequency Rectification
• Type : Silicon Rectifier Diode
• Structure : Resin Molded
• Applications :High Frequency Rectification, etc.

 

Sanken Electric co.,ltd.
SANKEN

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RG1G[GLASS PASSIVATED FAST SWITCHING RECTIFIER / RG1A THRU RG1M]

other part :RG1A   RG1B   RG1D   RG1J   RG1K   RG1M  

* High temperature metallurgically bonded construction

* Hermetically sealed package
 
* Glass passivated cavity-free junction

* 1.0 Ampere operation at TA=55°C with no thermal runaway

* Typical IRless than 0.1µA

* Capable of meeting environmental standards of MIL-S-19500

*  Fast switching for high efficiency

General Semiconductor
General

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