Qdatasheet_Logo    Integrated circuits, Transistor, Semiconductors Search and Free Datasheet PDF Download Site
Part Number :
Home  >>>  SC4520 Datasheet

SC45

  

Datasheet PDF

Match, Like SC450 SC451 SC452 SC453 SC454 SC457 SC458
Start with SC450* SC451* SC452* SC453* SC454* SC457* SC458*
End *BSC45 *4SC45 *6SC45 *CSC45 *XSC45 *2SC45 *TSC45 *WSC45
Included *SC450* *SC458* *SC45G*

U630H16XSC45[HardStore 2K x 8 nvSRAM Die]

other part :U630H16XS   U630H16XSA25   U630H16XSA35   U630H16XSA45   U630H16XSC25   U630H16XSC35   U630H16XSK25  

Description
The U630H16 has two separate modes of operation: SRAM mode and non-volatile mode, determined by the state of the NE pad. In SRAM mode, the memory operates as an ordinary static RAM. In non-volatile operation, data is transferred in parallel from SRAM to EEPROM or from EEPROM to SRAM. In this mode SRAM functions are disabled.
The U630H16 is a fast static RAM (25, 35, 45 ns), with a non-volatile electrically erasable PROM (EEPROM) element incorporated in each static memory cell. The SRAM can be read and written an unlimited number of times, while independent non-volatile data resides in EEPROM. Data transfers from the SRAM to the EEPROM (the STORE operation), or from the EEPROM to the SRAM (the RECALL operation) are initiated through the state of the NE pad. The U630H16 combines the high performance and ease of use of a fast SRAM with non-volatile data integrity.
Once a STORE cycle is initiated, further input or output are disabled until the cycle is completed.
Internally, RECALL is a two step procedure. First, the SRAM data is cleared and second, the non-volatile information is transferred into the SRAM cells.
The RECALL operation in no way alters the data in the EEPROM cells. The non-volatile data can be recalled an unlimited number of times.
The chips are tested with a restricted wafer probe program at room temperature only. Untested parameters are marked with a number sign (#).

Features
• High-performance CMOS nonvolatile static RAM 2048 x 8 bits
• 25, 35 and 45 ns Access Times
• 12, 20 and 25 ns Output Enable Access Times
• Hardware STORE Initiation
   (STORE Cycle Time < 10 ms)
• Automatic STORE Timing
• 106 STORE cycles to EEPROM
• 100 years data retention in EEPROM
• Automatic RECALL on Power Up
• Hardware RECALL Initiation
   (RECALL Cycle Time < 20 μs)
• Unlimited RECALL cycles from EEPROM
• Unlimited SRAM Read and Write
• Single 5 V ± 10 % Operation
• Operating temperature ranges:
   0 to 70 °C
   -40 to 85 °C
• QS 90000 Quality Standard
• ESD protection > 2000 V
   (MIL STD 883C M3015.7-HBM)

 

Simtek Corporation
Simtek

View

U632H16BSC45[PowerStore 2K x 8 nvSRAM]

other part :U632H16   U632H16DC25   U632H16DC35   U632H16DC45   U632H16DK25   U632H16DK35   U632H16DK45  

Description
The U632H16 has two separate modes of o peration: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary st atic RAM. In nonvolatile operation, data is transferred in parallel from SRAM to EEPROM or rom EEPROM to SRAM. In this mode SRAM functions are disabed.
The U632H16 is a fast s tatic RAM (25, 35, 45 ns), w ith a nonvolatile electr ically erasable PROM (EEPROM) element incorporated n each static memory cell. The SRAM can be read and wri tten an unlimited number of ti mes, while ndependent nonvolatile data resides in EEPROM. Data transfers rom the SRAM to the EEPROM (the STORE operation) take place automatically upon power down using charge stored in an external 100 µF capacitor. Transfers from he EEPROM to the SRAM (the RECALL operation) take place automatically on power up. The U632H16 combines the high performance and ease of use of a fast SRAM with nonvolatile data integrity.

Features
❐ High-performance CMOS nonvolatile static RAM 2048 x 8 bits
❐ 25, 35 and 45 ns Access Times
❐ 12, 20 and 25 ns Output Enable Access Times
❐ ICC = 15 mA at 200 ns Cycle Time
❐ Automatic STORE to EEPROM on Power Down usi ng external capacitor
❐ Hardware or Software initiated STORE
   (STORE Cycle Time < 10 ms)
❐ Automatic STORE Timing
❐ 105 STORE cycles to EEPROM
❐ 10 years data retention in EEPROM
❐ Automatic RECALL on Power Up
❐ Software RECALL I nitiation
   (RECALL Cycle Time < 20µs)
❐ Unlimited RECALL cycles from EEPROM
❐ Single 5 V± 10 % Operation
❐ Operating temperature ranges:
   0 to 70 °C
   -40 to 85 °C
❐ CECC 90000 Quality Standard
❐ ESD characterization according MIL STD 883C M3015.7-HBM
   (classific ation see IC Code Numbers)
❐ Packages: PDIP28 (300 mil)
                 PDIP28 (600 mi)
                 SOP28 (300 mil)

 

Zentrum Mikroelektronik Dresden AG
Zentrum

View

U630H16SC45[HardStore 2K x 8 nvSRAM]

other part :U630H16   U630H16BD1C25   U630H16BD1C35   U630H16BD1C45   U630H16BD1K25   U630H16BD1K35   U630H16BD1K45  

Description
The U630H16 has two separate modes of operation: SRAM mode and nonvolatile mode, determined by the state of the NE pin. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in parallel from SRAM to EEPROM or from EEPROM to SRAM. In this mode SRAM functions are disabled.
The U630H16 is a fast static RAM (25, 35, 45 ns), with a nonvolatile electrically erasable PROM (EEPROM) element incorporated in each static memory cell. The SRAM can be read and written an unlimited number of times, while independent nonvolatile data resides in EEPROM. Data transfers from the SRAM to the EEPROM (the STORE operation), or from the EEPROM to the SRAM (the RECALL operation) are initiated through the state of the NE pin. The U630H16 combines the high performance and ease of use of a fast SRAM with nonvolatile data integrity.
Once a STORE cycle is initiated, further input or output are disabled until the cycle is completed.
Internally, RECALL is a two step procedure. First, the SRAM data is cleared and second, the nonvolatile information is transferred into the SRAM cells.
The RECALL operation in no way alters the data in the EEPROM cells. The nonvolatile data can be recalled an unlimited number of times.

Features
❐ High-performance CMOS nonvolatile static RAM 2048 x 8 bits
❐ 25, 35 and 45 ns Access Times
❐ 12, 20 and 25 ns Output Enable Access Times
❐ Hardware STORE Initiation
   (STORE Cycle Time < 10 ms)
❐ Automatic STORE Timing
❐ 105 STORE cycles to EEPROM
❐ 10 years data retention in EEPROM
❐ Automatic RECALL on Power Up
❐ Hardware RECALL Initiation
   (RECALL Cycle Time < 20 µs)
❐ Unlimited RECALL cycles from EEPROM
❐ Unlimited Read and Write to SRAM
❐ Single 5 V ± 10 % Operation
❐ Operating temperature ranges:
   0 to 70 °C
   -40 to 85 °C
❐ CECC 90000 Quality Standard
❐ ESD characterization according MIL STD 883C M3015.7-HBM
   (classification see IC Code Numbers)
❐ Packages: PDIP28 (300 mil)
                 PDIP28 (600 mil)
                 SOP28 (300 mil)

 

Zentrum Mikroelektronik Dresden AG
Zentrum

View

2SC4501S[Silicon NPN Epitaxial]

other part :2SC4501   2SC4501L  

Application
   High gain amplifier and medium speed switching

Hitachi -> Renesas Electronics
Hitachi

View

U634H256SC45G1[PowerStore 32K x 8 nvSRAM]

other part :U634H256   U634H256SA25   U634H256SA25G1   U634H256SA35   U634H256SA35G1   U634H256SA45   U634H256SA45G1  

Description
The U634H256 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in parallel from SRAM to EEPROM or from EEPROM to SRAM. In this mode SRAM functions are disabled.
The U634H256 is a fast static RAM (25, 35, 45 ns), with a nonvolatile electrically erasable PROM (EEPROM) element incorporated in each static memory cell. The SRAM can be read and written an unlimited number of times, while independent nonvolatile data resides in EEPROM. Data transfers from the SRAM to the EEPROM (the STORE operation) take place automatically upon power down using charge stored in an external 100 μF capacitor.

Features
□ High-performance CMOS nonvolatile static RAM 32768 x 8 bits
□ 25, 35 and 45 ns Access Times
□ 10, 15 and 20 ns Output Enable
□ Access Times
□ ICC = 15 mA typ. at 200 ns Cycle Time
□ Automatic STORE to EEPROM on Power Down using external capacitor
□ Hardware or Software initiated STORE (STORE Cycle Time < 10 ms)
□ Automatic STORE Timing
□ 106 STORE cycles to EEPROM
□ 100 years data retention in EEPROM
□ Automatic RECALL on Power Up
□ Software RECALL Initiation (RECALL Cycle Time < 20 μs)
□ Unlimited RECALL cycles from EEPROM
□ Single 5 V ± 10 % Operation
□ Operating temperature ranges:
   0 to 70 °C
   -40 to 85 °C
   -40 to125 °C(only 35 ns)
□ QS 9000 Quality Standard
□ ESD protection > 2000 V (MIL STD 883C M3015.7-HBM)
□ RoHS compliance and Pb- free
□ Package: SOP32 (300 mil)

 

Simtek Corporation
Simtek

View

U634H256SC45[PowerStore 32K x 8 nvSRAM]

other part :U634H256   U634H256SA25   U634H256SA25G1   U634H256SA35   U634H256SA35G1   U634H256SA45   U634H256SA45G1  

Description
The U634H256 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in parallel from SRAM to EEPROM or from EEPROM to SRAM. In this mode SRAM functions are disabled.
The U634H256 is a fast static RAM (25, 35, 45 ns), with a nonvolatile electrically erasable PROM (EEPROM) element incorporated in each static memory cell. The SRAM can be read and written an unlimited number of times, while independent nonvolatile data resides in EEPROM. Data transfers from the SRAM to the EEPROM (the STORE operation) take place automatically upon power down using charge stored in an external 100 μF capacitor.

Features
□ High-performance CMOS nonvolatile static RAM 32768 x 8 bits
□ 25, 35 and 45 ns Access Times
□ 10, 15 and 20 ns Output Enable
□ Access Times
□ ICC = 15 mA typ. at 200 ns Cycle Time
□ Automatic STORE to EEPROM on Power Down using external capacitor
□ Hardware or Software initiated STORE (STORE Cycle Time < 10 ms)
□ Automatic STORE Timing
□ 106 STORE cycles to EEPROM
□ 100 years data retention in EEPROM
□ Automatic RECALL on Power Up
□ Software RECALL Initiation (RECALL Cycle Time < 20 μs)
□ Unlimited RECALL cycles from EEPROM
□ Single 5 V ± 10 % Operation
□ Operating temperature ranges:
   0 to 70 °C
   -40 to 85 °C
   -40 to125 °C(only 35 ns)
□ QS 9000 Quality Standard
□ ESD protection > 2000 V (MIL STD 883C M3015.7-HBM)
□ RoHS compliance and Pb- free
□ Package: SOP32 (300 mil)

 

Simtek Corporation
Simtek

View

2SC4501[Silicon NPN Epitaxial]

other part :2SC4501S   2SC4501L  

Application
   High gain amplifier and medium speed switching

Hitachi -> Renesas Electronics
Hitachi

View

U632H16SC45[PowerStore 2K x 8 nvSRAM]

other part :U632H16   U632H16DC25   U632H16DC35   U632H16DC45   U632H16DK25   U632H16DK35   U632H16DK45  

Description
The U632H16 has two separate modes of o peration: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary st atic RAM. In nonvolatile operation, data is transferred in parallel from SRAM to EEPROM or rom EEPROM to SRAM. In this mode SRAM functions are disabed.
The U632H16 is a fast s tatic RAM (25, 35, 45 ns), w ith a nonvolatile electr ically erasable PROM (EEPROM) element incorporated n each static memory cell. The SRAM can be read and wri tten an unlimited number of ti mes, while ndependent nonvolatile data resides in EEPROM. Data transfers rom the SRAM to the EEPROM (the STORE operation) take place automatically upon power down using charge stored in an external 100 µF capacitor. Transfers from he EEPROM to the SRAM (the RECALL operation) take place automatically on power up. The U632H16 combines the high performance and ease of use of a fast SRAM with nonvolatile data integrity.

Features
❐ High-performance CMOS nonvolatile static RAM 2048 x 8 bits
❐ 25, 35 and 45 ns Access Times
❐ 12, 20 and 25 ns Output Enable Access Times
❐ ICC = 15 mA at 200 ns Cycle Time
❐ Automatic STORE to EEPROM on Power Down usi ng external capacitor
❐ Hardware or Software initiated STORE
   (STORE Cycle Time < 10 ms)
❐ Automatic STORE Timing
❐ 105 STORE cycles to EEPROM
❐ 10 years data retention in EEPROM
❐ Automatic RECALL on Power Up
❐ Software RECALL I nitiation
   (RECALL Cycle Time < 20µs)
❐ Unlimited RECALL cycles from EEPROM
❐ Single 5 V± 10 % Operation
❐ Operating temperature ranges:
   0 to 70 °C
   -40 to 85 °C
❐ CECC 90000 Quality Standard
❐ ESD characterization according MIL STD 883C M3015.7-HBM
   (classific ation see IC Code Numbers)
❐ Packages: PDIP28 (300 mil)
                 PDIP28 (600 mi)
                 SOP28 (300 mil)

 

Zentrum Mikroelektronik Dresden AG
Zentrum

View

ST2SC458[NPN Silicon Epitaxial Planar Transistor]

other part :2SC458  

Low frequency amplifier applications.

The transistor is subdivided into three group, B, C and D according to its DC current gain.
On special request, these transistors can be manufactured in differentpin configurations.

Semtech Corporation
Semtech

View

U630H16BSC45[HardStore 2K x 8 nvSRAM]

other part :U630H16   U630H16BD1C25   U630H16BD1C35   U630H16BD1C45   U630H16BD1K25   U630H16BD1K35   U630H16BD1K45  

Description
The U630H16 has two separate modes of operation: SRAM mode and nonvolatile mode, determined by the state of the NE pin. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in parallel from SRAM to EEPROM or from EEPROM to SRAM. In this mode SRAM functions are disabled.
The U630H16 is a fast static RAM (25, 35, 45 ns), with a nonvolatile electrically erasable PROM (EEPROM) element incorporated in each static memory cell. The SRAM can be read and written an unlimited number of times, while independent nonvolatile data resides in EEPROM. Data transfers from the SRAM to the EEPROM (the STORE operation), or from the EEPROM to the SRAM (the RECALL operation) are initiated through the state of the NE pin. The U630H16 combines the high performance and ease of use of a fast SRAM with nonvolatile data integrity.
Once a STORE cycle is initiated, further input or output are disabled until the cycle is completed.
Internally, RECALL is a two step procedure. First, the SRAM data is cleared and second, the nonvolatile information is transferred into the SRAM cells.
The RECALL operation in no way alters the data in the EEPROM cells. The nonvolatile data can be recalled an unlimited number of times.

Features
❐ High-performance CMOS nonvolatile static RAM 2048 x 8 bits
❐ 25, 35 and 45 ns Access Times
❐ 12, 20 and 25 ns Output Enable Access Times
❐ Hardware STORE Initiation
   (STORE Cycle Time < 10 ms)
❐ Automatic STORE Timing
❐ 105 STORE cycles to EEPROM
❐ 10 years data retention in EEPROM
❐ Automatic RECALL on Power Up
❐ Hardware RECALL Initiation
   (RECALL Cycle Time < 20 µs)
❐ Unlimited RECALL cycles from EEPROM
❐ Unlimited Read and Write to SRAM
❐ Single 5 V ± 10 % Operation
❐ Operating temperature ranges:
   0 to 70 °C
   -40 to 85 °C
❐ CECC 90000 Quality Standard
❐ ESD characterization according MIL STD 883C M3015.7-HBM
   (classification see IC Code Numbers)
❐ Packages: PDIP28 (300 mil)
                 PDIP28 (600 mil)
                 SOP28 (300 mil)

 

Zentrum Mikroelektronik Dresden AG
Zentrum

View
1 2 3 4 5 6


Key Word
System  Voltage  Analog  Audio  Axial  Battery  Bipolar  Bridge  Camera  Chip  Clock  Color  Connector  Control  Controller  Converter  Counter  Crystal  Decoder  Digital 

@ 2014 - 2018  [ Home ] [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]