Qdatasheet_Logo    Integrated circuits, Transistor, Semiconductors Search and Free Datasheet PDF Download Site
Part Number :
Home  >>>  SC4520 Datasheet

SC45

  

Datasheet PDF

Match, Like SC450 SC451 SC452 SC453 SC454 SC457 SC458
Start with SC450* SC451* SC452* SC453* SC454* SC457* SC458*
End *BSC45 *4SC45 *6SC45 *CSC45 *XSC45 *2SC45 *TSC45 *WSC45
Included *SC450* *SC454* *SC458* *SC45G*

U634H256SC45[PowerStore 32K x 8 nvSRAM]

other part :U634H256   U634H256BD1C25   U634H256BD1C35   U634H256BD1C45   U634H256BD1K25   U634H256BD1K35   U634H256BD1K45  

Description
The U634H256 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in parallel from SRAM to EEPROM or from EEPROM to SRAM. In this mode SRAM functions are disabled.
The U634H256 is a fast static RAM (25, 35, 45 ns), with a nonvolatile electrically erasable PROM (EEPROM) element incorporated in each static memory cell. The SRAM can be read and written an unlimited number of times, while independent nonvolatile data resides in EEPROM. Data transfers from the SRAM to the EEPROM (the STORE operation) take place automatically upon power down using charge stored in an external 100 µF capacitor.

Features
❐ High-performance CMOS non volatile static RAM 32768 x 8 bits
❐ 25, 35 and 45 ns Access Times
❐ 10, 15 and 20 ns Output Enable Access Times
❐ ICC = 15 mA typ. at 200 ns Cycle Time
❐ Automatic STORE to EEPROM on Power Down using external capacitor
❐ Hardware or Software initiated STORE (STORE Cycle Time < 10 ms)
❐ Automatic STORE Timing
❐ 105 STORE cycles to EEPROM
❐ 10 years data retention in EEPROM
❐ Automatic RECALL on Power Up
❐ Software RECALL Initiation (RECALL Cycle Time < 20 µs)
❐ Unlimited RECALL cycles from EEPROM
❐ Single 5 V ± 10 % Operation
❐ Operating temperature ranges:
   0 to 70 °C
   -40 to 85 °C
   -40/-55 to 125 °C (only 35 ns)
❐ QS 9000 Quality Standard
❐ ESD protection > 2000 V (MIL STD 883C M3015.7-HBM)
❐ Packages: SOP32 (300 mil), PDIP32 (600 mil, only C/K-Type)

 

Zentrum Mikroelektronik Dresden AG
Zentrum

View

2SC4562R[Silicon NPN Epitaxial Planar Type]

other part :2SC4562   2SC4562Q  

Silicon NPN Epitaxial Planar Type

Features
High transition frequency fT.
Small collector output capacitance cob.

TY Semiconductor
Twtysemi

View

U635H256BSC45[PowerStore 32K x 8 nvSRAM]

other part :U634H256   U634H256BD1C25   U634H256BD1C35   U634H256BD1C45   U634H256BD1K25   U634H256BD1K35   U634H256BD1K45  

Description
The U634H256 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in parallel from SRAM to EEPROM or from EEPROM to SRAM. In this mode SRAM functions are disabled.
The U634H256 is a fast static RAM (25, 35, 45 ns), with a nonvolatile electrically erasable PROM (EEPROM) element incorporated in each static memory cell. The SRAM can be read and written an unlimited number of times, while independent nonvolatile data resides in EEPROM. Data transfers from the SRAM to the EEPROM (the STORE operation) take place automatically upon power down using charge stored in an external 100 µF capacitor.

Features
❐ High-performance CMOS non volatile static RAM 32768 x 8 bits
❐ 25, 35 and 45 ns Access Times
❐ 10, 15 and 20 ns Output Enable Access Times
❐ ICC = 15 mA typ. at 200 ns Cycle Time
❐ Automatic STORE to EEPROM on Power Down using external capacitor
❐ Hardware or Software initiated STORE (STORE Cycle Time < 10 ms)
❐ Automatic STORE Timing
❐ 105 STORE cycles to EEPROM
❐ 10 years data retention in EEPROM
❐ Automatic RECALL on Power Up
❐ Software RECALL Initiation (RECALL Cycle Time < 20 µs)
❐ Unlimited RECALL cycles from EEPROM
❐ Single 5 V ± 10 % Operation
❐ Operating temperature ranges:
   0 to 70 °C
   -40 to 85 °C
   -40/-55 to 125 °C (only 35 ns)
❐ QS 9000 Quality Standard
❐ ESD protection > 2000 V (MIL STD 883C M3015.7-HBM)
❐ Packages: SOP32 (300 mil), PDIP32 (600 mil, only C/K-Type)

 

Zentrum Mikroelektronik Dresden AG
Zentrum

View

2SC452_[Shortform Transistor Datasheet Guide]

other part :2SC395A/O_   2SC395A/R_   2SC395A/Y_   2SC395A_   2SC396_   2SC397_   2SC398_  

Shortform Transistor Datasheet Guide

Unspecified
ETC

View

2SC4563[PNP Epitaxial Planar Silicon Transistor]

other part :C4563  

Ultrahigh-Definition CRT Display Video Output Applications

Features
· High fT : fT=1.2GHz typ.
· High breakdown voltage : VCEO≥80V.
· High current : IC=500mA.
· Small reverse transfer capacitance : Cre=3.8pF (VCB=30V).
· Adoption of FBET process.

SANYO -> Panasonic
SANYO

View

U635H256CSC45[PowerStore 32K x 8 nvSRAM]

other part :U634H256   U634H256BD1C25   U634H256BD1C35   U634H256BD1C45   U634H256BD1K25   U634H256BD1K35   U634H256BD1K45  

Description
The U634H256 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in parallel from SRAM to EEPROM or from EEPROM to SRAM. In this mode SRAM functions are disabled.
The U634H256 is a fast static RAM (25, 35, 45 ns), with a nonvolatile electrically erasable PROM (EEPROM) element incorporated in each static memory cell. The SRAM can be read and written an unlimited number of times, while independent nonvolatile data resides in EEPROM. Data transfers from the SRAM to the EEPROM (the STORE operation) take place automatically upon power down using charge stored in an external 100 µF capacitor.

Features
❐ High-performance CMOS non volatile static RAM 32768 x 8 bits
❐ 25, 35 and 45 ns Access Times
❐ 10, 15 and 20 ns Output Enable Access Times
❐ ICC = 15 mA typ. at 200 ns Cycle Time
❐ Automatic STORE to EEPROM on Power Down using external capacitor
❐ Hardware or Software initiated STORE (STORE Cycle Time < 10 ms)
❐ Automatic STORE Timing
❐ 105 STORE cycles to EEPROM
❐ 10 years data retention in EEPROM
❐ Automatic RECALL on Power Up
❐ Software RECALL Initiation (RECALL Cycle Time < 20 µs)
❐ Unlimited RECALL cycles from EEPROM
❐ Single 5 V ± 10 % Operation
❐ Operating temperature ranges:
   0 to 70 °C
   -40 to 85 °C
   -40/-55 to 125 °C (only 35 ns)
❐ QS 9000 Quality Standard
❐ ESD protection > 2000 V (MIL STD 883C M3015.7-HBM)
❐ Packages: SOP32 (300 mil), PDIP32 (600 mil, only C/K-Type)

 

Zentrum Mikroelektronik Dresden AG
Zentrum

View

2SC4568[NPN SILICON EPITAXIAL TRANSISTOR UHF TV TUNER OSC/MIXER]

other part :2SC4569   C4536   C4568   C4569   C4570-T2   C4571   C4571-T2  

DESCRIPTION
The 2SC4568 is an NPN silicon epitaxial transistor intended for use as UHF oscillator and UHF mixer in a tuner of TV receiver.

FEATURES
• High gain bandwidth product fT= 5.5 GHz TYP.
• Low output capacitance Cob= 0.7 pF TYP.
• Surface mount package EIAJ: SC-59

NEC => Renesas Technology
NEC

View

2SC4569[NPN SILICON EPITAXIAL TRANSISTOR UHF TV TUNER OSC/MIXER]

other part :2SC4568   C4536   C4568   C4569   C4570-T2   C4571   C4571-T2  

DESCRIPTION
The 2SC4568 is an NPN silicon epitaxial transistor intended for use as UHF oscillator and UHF mixer in a tuner of TV receiver.

FEATURES
• High gain bandwidth product fT= 5.5 GHz TYP.
• Low output capacitance Cob= 0.7 pF TYP.
• Surface mount package EIAJ: SC-59

NEC => Renesas Technology
NEC

View

2SC456_[Shortform Transistor Datasheet Guide]

other part :2SC395A/O_   2SC395A/R_   2SC395A/Y_   2SC395A_   2SC396_   2SC397_   2SC398_  

Shortform Transistor Datasheet Guide

Unspecified
ETC

View

2SC4533[Silicon NPN triple diffusion planar type]

other part :C4533  

Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching

■ Features
● High-speed switching
● High collector to base voltage VCBO
● Wide area of safe operation (ASO)
● Satisfactory linearity of foward current transfer ratio hFE
● Full-pack package which can be installed to the heat sink with one screw

Panasonic Corporation
Panasonic

View
1 2 3 4 5 6


Key Word
System  Voltage  Analog  Audio  Axial  Battery  Bipolar  Bridge  Camera  Chip  Clock  Color  Connector  Control  Controller  Converter  Counter  Crystal  Decoder  Digital 

@ 2014 - 2018  [ Home ] [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]