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Included *SF30* *SF32* *SF33* *SF34* *SF35* *SF36* *SF37* *SF38* *SF39* *SF3E* *SF3N* *SF3P*

MMSF3300[SINGLE TMOS POWER MOSFET 30 VOLTS RDS(on) = 12.5 mΩ]

other part :MMSF3300R2  

WaveFET™ Power Surface Mount Products
HDTMOS Single N-Channel Field Effect Transistor

WaveFET™ devices are an advanced series of power MOSFETs which utilize Motorola’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. WaveFET™ devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

• Characterized Over a Wide Range of Power Ratings
• Ultralow RDS(on) Provides Higher Efficiency and Extends Battery Life in Portable Applications
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Miniature SO–8 Surface Mount Package — Saves Board Space

 

Motorola => Freescale
Motorola

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MMSF3300R2[SINGLE TMOS POWER MOSFET 30 VOLTS RDS(on) = 12.5 mΩ]

other part :MMSF3300  

WaveFET™ Power Surface Mount Products
HDTMOS Single N-Channel Field Effect Transistor

WaveFET™ devices are an advanced series of power MOSFETs which utilize Motorola’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. WaveFET™ devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

• Characterized Over a Wide Range of Power Ratings
• Ultralow RDS(on) Provides Higher Efficiency and Extends Battery Life in Portable Applications
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Miniature SO–8 Surface Mount Package — Saves Board Space

 

Motorola => Freescale
Motorola

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MMSF3305[SINGLE TMOS POWER MOSFET 9.1 AMPERES 30 VOLTS RDS(on)= 0.02 OHM]

other part :MMSF3305R2   S3305  

Medium Power Surface Mount Products
TMOS Single P-Channel Field Effect Transistors

WaveFET devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. WaveFET devices are designed for use in low voltage, high speed switching applications where power efficiency is important.

• Ultra Low RDS(on)Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Miniature SO–8 Surface Mount Package — Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSSSpecified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for SO–8 Package Provided

Motorola => Freescale
Motorola

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MMSF3305R2[SINGLE TMOS POWER MOSFET 9.1 AMPERES 30 VOLTS RDS(on)= 0.02 OHM]

other part :MMSF3305   S3305  

Medium Power Surface Mount Products
TMOS Single P-Channel Field Effect Transistors

WaveFET devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. WaveFET devices are designed for use in low voltage, high speed switching applications where power efficiency is important.

• Ultra Low RDS(on)Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Miniature SO–8 Surface Mount Package — Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSSSpecified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for SO–8 Package Provided

Motorola => Freescale
Motorola

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5SF332MT252A97[CERAMIC CAPACITORS CLASS 5 Series: AC X1, Y1 & Y2 Capacitors]

other part :5SB101KT252A67   5SB101KT402A97   5SB102KT252A67   5SB102KT402A97   5SB151KT252A67   5SB151KT402A97   5SB152KT252A97  

For use in circuits where alternating, pulsating, intermittent and steady high voltage exist.

RFE international
RFE

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STK11C48-SF35[2K x 8 nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM]

other part :STK11C48   STK11C48-N25   STK11C48-N25I   STK11C48-N35   STK11C48-N35I   STK11C48-N45   STK11C48-N45I  

DESCRIPTION
The Simtek STK11C48 is a fast static RAM with a nonvolatile element incorporated in each static memory cell. The SRAM can be read and written an unlimited number of times, while independent, nonvolatile data resides in the Nonvolatile Elements. Data transfers from the SRAM to the Nonvolatile Elements (the STORE operation), or from Nonvolatile Elements to SRAM (the RECALL operation), take place using a software sequence. Transfers from the Nonvolatile Elements to the SRAM (the RECALL operation) also take place automatically on restoration of power.

FEATURES
• 25ns, 35ns and 45ns Access Times
• STORE to Nonvolatile Elements Initiated by Software
• RECALL to SRAM Initiated by Software or Power Restore
• 10mA Typical ICC at 200ns Cycle Time
• Unlimited READ, WRITE and RECALL Cycles
• 1,000,000 STORE Cycles to Nonvolatile Elements
• 100-Year Data Retention in Nonvolatile Elements
• Commercial and Industrial Temperatures
• 28-Pin 300 mil PDIP, 300 mil SOIC and
   350 mil SOIC Packages

Simtek Corporation
Simtek

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STK11C68-SF35[8K x 8 nvSRAM nonvolatile static RAM]

other part :SMD5962-9232404MXA   SMD5962-9232404MXC   SMD5962-9232404MXX   SMD5962-9232404MYA   SMD5962-9232404MYC   SMD5962-9232404MYX   SMD5962-9232405MXA  

DESCRIPTION
The Simtek STK11C68 is a 64Kb fast static RAM with a nonvolatile Quantum Trap storage element included with each memory cell. The SRAM provides the fast access & cycle times, ease of use, and unlimited read & write endurance of a normal SRAM.

FEATURES
• 25, 35, 45, and 55 ns Read Access & R/W Cycle Times
• Unlimited Read/Write Endurance
• Pin compatible with Industry Standard SRAMs
• Software-initiated Non-Volatile STORE
• Automatic RECALL to SRAM on Power Up
• Unlimited RECALL cycles
• 1 Million STORE Cycles
• 100-Year Non-volatile Data Retention
• Single 5V + 10% Operation
• Commercial, Industrial, and Military Temperatures
• 28 pin 330 mil SOIC (RoHS-Compatible)
• 28-pin CDIP and LCC packages

 

Simtek Corporation
Simtek

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STK12C68-5SF35[8K x 8 AutoStore™ nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM]

other part :5962-9459901MXA   5962-9459901MXC   5962-9459901MXX   5962-9459901MYA   5962-9459901MYC   5962-9459901MYX   5962-9459902MXA  

DESCRIPTION
The Simtek STK12C68 is a fast static RAMwith a nonvolatile element incorporated in each static
memory cell. The SRAMcan be read and written an unlimited number of times, while independent, nonvolatile data resides in Nonvolatile Elements. Data transfers from the SRAMto the Nonvolatile Elements (the STOREoperation) can take place automatically on power down. A 68µF or larger capacitor tied from VCAPto ground guarantees the  STOREoperation, regardless of power-down slew rate or loss of power from “hot swapping”. Transfers from the Nonvolatile Elements to the SRAM(the RECALLoperation) take place automatically on restoration of power. Initiation of STORE and RECALLcycles can also be soft ware controlled by entering specific read sequences. A hardware STOREmay be initiated with the HSB pin.

FEATURES
• 25ns, 35ns, 45ns and 55ns Access Times
• “Hands-off” Automatic STOREwith External 68µF Capacitor on Power Down
• STOREto Nonvolatile Elements Initiated by Hardware, Software or AutoStore™ on Power Down
• RECALLto SRAM Initiated by Software or Power Restore
• 10mA Typical ICC at 200ns Cycle Time
• Unlimited READ, WRITE and RECALLCycles
• 1,000,000 STORECycles to Nonvolatile Elements (Commercial/Industrial)
• 100-Year Data Retention in Nonvolatile Elements (Commercial/Industrial)
• Commercial, Industrial and Military Temperatures
• 28-Pin SOIC, DIP and LCC Packages

Simtek Corporation
Simtek

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STK12C68-SF35[8K x 8 AutoStore™ nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM]

other part :5962-9459901MXA   5962-9459901MXC   5962-9459901MXX   5962-9459901MYA   5962-9459901MYC   5962-9459901MYX   5962-9459902MXA  

DESCRIPTION
The Simtek STK12C68 is a fast static RAMwith a nonvolatile element incorporated in each static
memory cell. The SRAMcan be read and written an unlimited number of times, while independent, nonvolatile data resides in Nonvolatile Elements. Data transfers from the SRAMto the Nonvolatile Elements (the STOREoperation) can take place automatically on power down. A 68µF or larger capacitor tied from VCAPto ground guarantees the  STOREoperation, regardless of power-down slew rate or loss of power from “hot swapping”. Transfers from the Nonvolatile Elements to the SRAM(the RECALLoperation) take place automatically on restoration of power. Initiation of STORE and RECALLcycles can also be soft ware controlled by entering specific read sequences. A hardware STOREmay be initiated with the HSB pin.

FEATURES
• 25ns, 35ns, 45ns and 55ns Access Times
• “Hands-off” Automatic STOREwith External 68µF Capacitor on Power Down
• STOREto Nonvolatile Elements Initiated by Hardware, Software or AutoStore™ on Power Down
• RECALLto SRAM Initiated by Software or Power Restore
• 10mA Typical ICC at 200ns Cycle Time
• Unlimited READ, WRITE and RECALLCycles
• 1,000,000 STORECycles to Nonvolatile Elements (Commercial/Industrial)
• 100-Year Data Retention in Nonvolatile Elements (Commercial/Industrial)
• Commercial, Industrial and Military Temperatures
• 28-Pin SOIC, DIP and LCC Packages

Simtek Corporation
Simtek

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STK10C68-5SF35[8K x 8 nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM]

other part :5962-9305604MXA   5962-9305604MXC   5962-9305604MXX   5962-9305604MYA   5962-9305604MYC   5962-9305604MYX   5962-9305605MXA  

[SIMTEK]

DESCRIPTION
The Simtek STK10C68 is a fast static RAM with a nonvolatile element incorporated in each static memory cell. The SRAM can be read and written an unlimited number of times, while independent nonvolatile data resides in Nonvolatile Elements. Data may easily be transferred from the SRAM to the Nonvolatile Elements (the STORE operation), or from the Nonvolatile Elements to the SRAM (the RECALL operation), using the NE pin. Transfers from the Nonvolatile Elements to the SRAM (the RECALL operation) also take place automatically on restoration of power. The STK10C68 combines the high performance and ease of use of a fast SRAM with nonvolatile data integrity.

FEATURES
• 25ns, 35ns, 45ns and 55ns Access Times
• STORE to Nonvolatile Elements Initiated by Hardware
• RECALL to SRAM Initiated by Hardware or Power Restore
• Automatic STORE Timing
• 10mA Typical ICC at 200ns Cycle Time
• Unlimited READ, WRITE and RECALL Cycles
• 1,000,000 STORE Cycles to Nonvolatile Elements (Industrial/Commercial)
• 100-Year Data Retention (Industrial/Commercial)
• Commercial, Industrial and Military Temperatures
• 28-Pin DIP, SOIC and LCC Packages

 

Unspecified
ETC1

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