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SN74CBTD3306

  

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SN74CBTD3306[DUAL FET BUS SWITCH WITH LEVEL SHIFTING]

other part :CC306   SN74CBTD3306D   SN74CBTD3306DR   SN74CBTD3306PW   SN74CBTD3306DE4   SN74CBTD3306DG4   SN74CBTD3306PWR  

description/ordering information
The SN74CBTD3306 features two independent line switches.

● 5-Ω Switch Connection Between Two Ports
● TTL-Compatible Input Levels
● Designed to Be Used in Level-Shifting Applications

Texas Instruments
TI

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SN74CBTD3306[DUAL FET BUS SWITCH WITH LEVEL SHIFTING]

other part :CC306   SN74CBTD3306D   SN74CBTD3306DR   SN74CBTD3306PW   SN74CBTD3306PWR   SN74CBTD3306DRG4   SN74CBTD3306PWG4  

description/ordering information
The SN74CBTD3306 features two independent line switches.

● 5-Ω Switch Connection Between Two Ports
● TTL-Compatible Input Levels
● Designed to Be Used in Level-Shifting Applications

Texas Instruments
Texas-Instruments

View

SN74CBTD3306C[DUAL FET BUS SWITCH WITH LEVEL SHIFTING 5-V BUS SWITCH WITH-2-V UNDERSHOOT PROTECTION]

other part :CC306C   SN74CBTD3306CD   SN74CBTD3306CDR   SN74CBTD3306CPW   SN74CBTD3306CPWR   SN74CBTD3306CDRE4   SN74CBTD3306CPWRE4  

description/ordering information
The SN74CBTD3306C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. This device features an integrated diode in series with VCC to provide level shifting for 5-V input down to 3.3-V output levels. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBTD3306C provides protection for undershoot up to −2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

● Undershoot Protection for Off-Isolation on A and B Ports Up To −2 V
● Integrated Diode to VCC Provides 5-V Input Down To 3.3-V Output Level Shift
● Bidirectional Data Flow, With Near-Zero Propagation Delay
● Low ON-State Resistance (ron) Characteristics (ron = 3 Ω Typical)
● Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5 pF Typical)
● Data and Control Inputs Provide Undershoot Clamp Diodes
● VCC Operating Range From 4.5 V to 5.5 V
● Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
● Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
● Ioff Supports Partial-Power-Down Mode Operation
● Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
● ESD Performance Tested Per JESD 22
    − 2000-V Human-Body Model (A114-B, Class II)
    − 1000-V Charged-Device Model (C101)
● Supports Both Digital and Analog Applications: USB Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

Texas Instruments
TI

View

SN74CBTD3306C[DUAL FET BUS SWITCH WITH LEVEL SHIFTING 5-V BUS SWITCH WITH-2-V UNDERSHOOT PROTECTION]

other part :CC306C   SN74CBTD3306CD   SN74CBTD3306CDR   SN74CBTD3306CPW   SN74CBTD3306CPWR   SN74CBTD3306CPWRG4  

description/ordering information
The SN74CBTD3306C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. This device features an integrated diode in series with VCC to provide level shifting for 5-V input down to 3.3-V output levels. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBTD3306C provides protection for undershoot up to −2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

● Undershoot Protection for Off-Isolation on A and B Ports Up To −2 V
● Integrated Diode to VCC Provides 5-V Input Down To 3.3-V Output Level Shift
● Bidirectional Data Flow, With Near-Zero Propagation Delay
● Low ON-State Resistance (ron) Characteristics (ron = 3 Ω Typical)
● Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5 pF Typical)
● Data and Control Inputs Provide Undershoot Clamp Diodes
● VCC Operating Range From 4.5 V to 5.5 V
● Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
● Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
● Ioff Supports Partial-Power-Down Mode Operation
● Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
● ESD Performance Tested Per JESD 22
    − 2000-V Human-Body Model (A114-B, Class II)
    − 1000-V Charged-Device Model (C101)
● Supports Both Digital and Analog Applications: USB Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

Texas Instruments
Texas-Instruments

View

SN74CBTD3306D[DUAL FET BUS SWITCH WITH LEVEL SHIFTING]

other part :CC306   SN74CBTD3306   SN74CBTD3306DR   SN74CBTD3306PW   SN74CBTD3306DE4   SN74CBTD3306DG4   SN74CBTD3306PWR  

description/ordering information
The SN74CBTD3306 features two independent line switches.

● 5-Ω Switch Connection Between Two Ports
● TTL-Compatible Input Levels
● Designed to Be Used in Level-Shifting Applications

Texas Instruments
TI

View

SN74CBTD3306D[DUAL FET BUS SWITCH WITH LEVEL SHIFTING]

other part :CC306   SN74CBTD3306   SN74CBTD3306DR   SN74CBTD3306PW   SN74CBTD3306PWR   SN74CBTD3306DRG4   SN74CBTD3306PWG4  

description/ordering information
The SN74CBTD3306 features two independent line switches.

● 5-Ω Switch Connection Between Two Ports
● TTL-Compatible Input Levels
● Designed to Be Used in Level-Shifting Applications

Texas Instruments
Texas-Instruments

View

SN74CBTD3306CD[DUAL FET BUS SWITCH WITH LEVEL SHIFTING 5-V BUS SWITCH WITH-2-V UNDERSHOOT PROTECTION]

other part :CC306C   SN74CBTD3306C   SN74CBTD3306CDR   SN74CBTD3306CPW   SN74CBTD3306CPWR   SN74CBTD3306CDRE4   SN74CBTD3306CPWRE4  

description/ordering information
The SN74CBTD3306C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. This device features an integrated diode in series with VCC to provide level shifting for 5-V input down to 3.3-V output levels. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBTD3306C provides protection for undershoot up to −2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

● Undershoot Protection for Off-Isolation on A and B Ports Up To −2 V
● Integrated Diode to VCC Provides 5-V Input Down To 3.3-V Output Level Shift
● Bidirectional Data Flow, With Near-Zero Propagation Delay
● Low ON-State Resistance (ron) Characteristics (ron = 3 Ω Typical)
● Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5 pF Typical)
● Data and Control Inputs Provide Undershoot Clamp Diodes
● VCC Operating Range From 4.5 V to 5.5 V
● Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
● Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
● Ioff Supports Partial-Power-Down Mode Operation
● Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
● ESD Performance Tested Per JESD 22
    − 2000-V Human-Body Model (A114-B, Class II)
    − 1000-V Charged-Device Model (C101)
● Supports Both Digital and Analog Applications: USB Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

Texas Instruments
TI

View

SN74CBTD3306CD[DUAL FET BUS SWITCH WITH LEVEL SHIFTING 5-V BUS SWITCH WITH-2-V UNDERSHOOT PROTECTION]

other part :CC306C   SN74CBTD3306C   SN74CBTD3306CDR   SN74CBTD3306CPW   SN74CBTD3306CPWR   SN74CBTD3306CPWRG4  

description/ordering information
The SN74CBTD3306C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. This device features an integrated diode in series with VCC to provide level shifting for 5-V input down to 3.3-V output levels. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBTD3306C provides protection for undershoot up to −2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

● Undershoot Protection for Off-Isolation on A and B Ports Up To −2 V
● Integrated Diode to VCC Provides 5-V Input Down To 3.3-V Output Level Shift
● Bidirectional Data Flow, With Near-Zero Propagation Delay
● Low ON-State Resistance (ron) Characteristics (ron = 3 Ω Typical)
● Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5 pF Typical)
● Data and Control Inputs Provide Undershoot Clamp Diodes
● VCC Operating Range From 4.5 V to 5.5 V
● Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
● Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
● Ioff Supports Partial-Power-Down Mode Operation
● Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
● ESD Performance Tested Per JESD 22
    − 2000-V Human-Body Model (A114-B, Class II)
    − 1000-V Charged-Device Model (C101)
● Supports Both Digital and Analog Applications: USB Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

Texas Instruments
Texas-Instruments

View

SN74CBTD3306DR[DUAL FET BUS SWITCH WITH LEVEL SHIFTING]

other part :CC306   SN74CBTD3306   SN74CBTD3306D   SN74CBTD3306PW   SN74CBTD3306DE4   SN74CBTD3306DG4   SN74CBTD3306PWR  

description/ordering information
The SN74CBTD3306 features two independent line switches.

● 5-Ω Switch Connection Between Two Ports
● TTL-Compatible Input Levels
● Designed to Be Used in Level-Shifting Applications

Texas Instruments
TI

View

SN74CBTD3306DR[DUAL FET BUS SWITCH WITH LEVEL SHIFTING]

other part :CC306   SN74CBTD3306   SN74CBTD3306D   SN74CBTD3306PW   SN74CBTD3306PWR   SN74CBTD3306DRG4   SN74CBTD3306PWG4  

description/ordering information
The SN74CBTD3306 features two independent line switches.

● 5-Ω Switch Connection Between Two Ports
● TTL-Compatible Input Levels
● Designed to Be Used in Level-Shifting Applications

Texas Instruments
Texas-Instruments

View
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