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AUIRLR120NTR[HEXFET® Power MOSFET]

other part :AUIRLR120N   AUIRLR120NTRL   AUIRLR120NTRR  

AUTOMOTIVE GRADE

Description
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

• Advanced Planar Technology
• Logic-Level Gate Drive
• Low On-Resistance
• Dynamic dV/dT Rating
• 175ºC Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free, RoHS Compliant
• Automotive Qualified*

International Rectifier
IR

View

ISL95810UIRT8Z-T[Single Digitally Controlled Potentiometer (XDCP™)]

other part :ISL95810   ISL95810UIRT8   ISL95810UIRT8Z   ISL95810UIU8   ISL95810UIU8Z   ISL95810WIRT8Z   ISL95810WIU8  

Low Noise, Low Power I2C Bus, 256 Taps The ISL95810 integrates a digitally controlled potentiometer (XDCP) on a monolithic CMOS integrated circuit. The digitally controlled potentiometer is implemented with a combination of resistor elements and CMOS switches. The
position of the wiper is controlled by the user through the I2C bus interface. The potentiometer has an associated volatile Wiper Register (WR) and a non-volatile Initial Value Register (IVR), that can be directly written to and read by the user. The content of the WR controlsthe position of the wiper. At power-up the device recalls the contents of the DCP’s IVR to the WR.

Features
• 256 resistor taps - 0.4% resolution
• I2C serial interface
• Wiper resistance: 70Ωtypical @ 3.3V
• Non-volatile storage of wiper position
• Standby current 5µA max
• Power supply: 2.7V to 5.5V
• 50kΩ, 10kΩ total resistance
• High reliability
- Endurance: 200,000 data changes per bit per register
- Register data retention: 50 years @ T ≤75°C
• 8 Ld MSOP and 8 Ld TDFN packaging
• Pb-free plus anneal available (RoHS compliant)

Intersil
Intersil

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ISL95810UIRT8[Single Digitally Controlled Potentiometer (XDCP™)]

other part :ISL95810   ISL95810UIRT8Z   ISL95810UIRT8Z-T   ISL95810UIU8   ISL95810UIU8Z   ISL95810WIRT8Z   ISL95810WIU8  

Low Noise, Low Power I2C Bus, 256 Taps The ISL95810 integrates a digitally controlled potentiometer (XDCP) on a monolithic CMOS integrated circuit. The digitally controlled potentiometer is implemented with a combination of resistor elements and CMOS switches. The
position of the wiper is controlled by the user through the I2C bus interface. The potentiometer has an associated volatile Wiper Register (WR) and a non-volatile Initial Value Register (IVR), that can be directly written to and read by the user. The content of the WR controlsthe position of the wiper. At power-up the device recalls the contents of the DCP’s IVR to the WR.

Features
• 256 resistor taps - 0.4% resolution
• I2C serial interface
• Wiper resistance: 70Ωtypical @ 3.3V
• Non-volatile storage of wiper position
• Standby current 5µA max
• Power supply: 2.7V to 5.5V
• 50kΩ, 10kΩ total resistance
• High reliability
- Endurance: 200,000 data changes per bit per register
- Register data retention: 50 years @ T ≤75°C
• 8 Ld MSOP and 8 Ld TDFN packaging
• Pb-free plus anneal available (RoHS compliant)

Intersil
Intersil

View

AUIRLR120NTRL[HEXFET® Power MOSFET]

other part :AUIRLR120N   AUIRLR120NTR   AUIRLR120NTRR  

AUTOMOTIVE GRADE

Description
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

• Advanced Planar Technology
• Logic-Level Gate Drive
• Low On-Resistance
• Dynamic dV/dT Rating
• 175ºC Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free, RoHS Compliant
• Automotive Qualified*

International Rectifier
IR

View

AUIRLR120N[HEXFET® Power MOSFET]

other part :AUIRLR120NTR   AUIRLR120NTRL   AUIRLR120NTRR  

AUTOMOTIVE GRADE

Description
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

• Advanced Planar Technology
• Logic-Level Gate Drive
• Low On-Resistance
• Dynamic dV/dT Rating
• 175ºC Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free, RoHS Compliant
• Automotive Qualified*

International Rectifier
IR

View

ISL95810UIRT8Z[Single Digitally Controlled Potentiometer (XDCP™)]

other part :ISL95810   ISL95810UIRT8   ISL95810UIRT8Z-T   ISL95810UIU8   ISL95810UIU8Z   ISL95810WIRT8Z   ISL95810WIU8  

Low Noise, Low Power I2C Bus, 256 Taps The ISL95810 integrates a digitally controlled potentiometer (XDCP) on a monolithic CMOS integrated circuit. The digitally controlled potentiometer is implemented with a combination of resistor elements and CMOS switches. The
position of the wiper is controlled by the user through the I2C bus interface. The potentiometer has an associated volatile Wiper Register (WR) and a non-volatile Initial Value Register (IVR), that can be directly written to and read by the user. The content of the WR controlsthe position of the wiper. At power-up the device recalls the contents of the DCP’s IVR to the WR.

Features
• 256 resistor taps - 0.4% resolution
• I2C serial interface
• Wiper resistance: 70Ωtypical @ 3.3V
• Non-volatile storage of wiper position
• Standby current 5µA max
• Power supply: 2.7V to 5.5V
• 50kΩ, 10kΩ total resistance
• High reliability
- Endurance: 200,000 data changes per bit per register
- Register data retention: 50 years @ T ≤75°C
• 8 Ld MSOP and 8 Ld TDFN packaging
• Pb-free plus anneal available (RoHS compliant)

Intersil
Intersil

View

AUIRLR120NTRR[HEXFET® Power MOSFET]

other part :AUIRLR120N   AUIRLR120NTR   AUIRLR120NTRL  

AUTOMOTIVE GRADE

Description
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

• Advanced Planar Technology
• Logic-Level Gate Drive
• Low On-Resistance
• Dynamic dV/dT Rating
• 175ºC Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free, RoHS Compliant
• Automotive Qualified*

International Rectifier
IR

View
1


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