These FDmeshâ„¢ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmeshâ„¢ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters.
â€¢ 100% avalanche tested
â€¢ Low input capacitance and gate charge
â€¢ Low gate input resistance
â€¢ Extremely high dv/dt and avalanche capabilities
â€¢ Switching applications