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2N5614 Datasheet PDF - New Jersey Semiconductor

Part NameDescriptionManufacturer
2N5614 Silicon NPN Power Transistors NJSEMI
New Jersey Semiconductor NJSEMI
Other PDF  no available.
2N5614 Datasheet PDF : PDF DOWNLOAD   
2N5614 image

DESCRIPTION
• DC Current Gain- : hFE= 70-200@IC= 2.5A
• Wide Area of Safe Operation
• Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min)
• Complement to Type 2N5613

APPLICATIONS
• Designed for use in high frequency power amplifiers, audio power amplifier and drivers.

 

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