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60R120P7 Datasheet PDF - Infineon Technologies

Part Name
Description
MFG CO.
60R120P7
Infineon
Infineon Technologies Infineon
Other PDF
  2017  
PDF
60R120P7 Datasheet PDF : PDF DOWNLOAD     
IPB60R120P7 image

600V CoolMOS™ P7 Power Transistor
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The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of bodydiode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching applications even more efficient, more compact and much cooler.

Features
• Suitable for hard and soft switching (PFC and LLC) due to an outstanding
   commutation ruggedness
• Significant reduction of switching and conduction losses
• Excellent ESD robustness >2kV (HBM) for all products
• Better RDS(on)/package products compared to competition enabled by a
   low RDS(on)*A (below 1Ohm*mm²)
• Fully qualified acc. JEDEC for Industrial Applications

Benefits
• Ease of use and fast design-in through low ringing tendency and usage
   across PFC and PWM stages
• Simplified thermal management due to low switching and conduction
   losses
• Increased power density solutions enabled by using products with
   smaller footprint and higher manufacturing quality due to >2 kV ESD
   protection
• Suitable for a wide variety of applications and power ranges

Potential applications
   PFC stages, hard switching PWM stages and resonant switching stages
   for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom
   and UPS.

 

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