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AMS2300 Datasheet PDF - Advanced Monolithic Systems Ltd

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The AMS2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power iloss are needed in a very small outline surface mount package.

● 20V/6.0A, RDS(ON) = 22mΩ (Typ.)
                        @VGS = 10V
● 20V/5.0A, RDS(ON) = 36mΩ
                        @VGS = 4.5V
● 20V/4.5A, RDS(ON) = 45mΩ
                        @VGS = 2.5V
● 20V/4.0A, RDS(ON) = 60mΩ
                        @VGS = 1.8V
● Super high density cell design for
   extremely low RDS(ON)
● Exceptional on-resistance and
   Maximum DC current capability
● SOT-23-3L package design


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