BUK9620-55A Datasheet PDF - Nexperia B.V. All rights reserved

General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Features and benefits
■ Low conduction losses due to low
   on-state resistance
■ Q101 compliant
■ Suitable for logic level gate drive
   sources
■ Suitable for thermally demanding
   environments due to 175 °C rating

Applications
■ 12 V and 24 V loads
■ Automotive and general purpose
   power switching
■ Motors, lamps and solenoids