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FQD3N60 Datasheet PDF - Fairchild Semiconductor

Part Name
Description
MFG CO.
FQD3N60
Fairchild
Fairchild Semiconductor Fairchild
Other PDF
  no available.
PDF
FQD3N60 Datasheet PDF : PDF DOWNLOAD     
FQU3N60 image

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features
• 2.4A, 600V, RDS(on) = 3.6Ω @VGS = 10 V
• Low gate charge ( typical 10 nC)
• Low Crss ( typical 5.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

 

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