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FQP30N06L Datasheet PDF - Fairchild Semiconductor

Part Name
Description
MFG CO.
FQP30N06L
Fairchild
Fairchild Semiconductor Fairchild
Other PDF
  2001  
PDF
FQP30N06L Datasheet PDF : PDF DOWNLOAD     
FQP30N06L image

Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Features
• 32 A, 60 V, RDS(on) = 35 mΩ (Max.) @ VGS = 10 V, ID = 16 A
• Low Gate Charge (Typ. 15 nC)
• Low Crss (Typ. 50 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating

 

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