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STB24N60DM2 Datasheet PDF - STMicroelectronics

Part Name
Description
MFG CO.
Other PDF
  no available.
PDF
STB24N60DM2 Datasheet PDF : PDF DOWNLOAD     
STW24N60DM2 image

Description
These FDmesh II Plus™ low Qg Power MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Features
• Extremely low gate charge and input capacitance
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
• Extremely high dv/dt and avalanche capabilities

Applications
• Switching applications

 

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