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FQP30N06L View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
MFG CO.
FQP30N06L
Fairchild
Fairchild Semiconductor Fairchild
'FQP30N06L' PDF : 9 Pages View PDF
1 2 3 4 5 6 7 8 9
FQP30N06L
N-Channel QFET® MOSFET
60 V, 32 A, 35 mΩ
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
November 2013
Features
• 32 A, 60 V, RDS(on) = 35 mΩ (Max.) @ VGS = 10 V,
ID = 16 A
• Low Gate Charge (Typ. 15 nC)
• Low Crss (Typ. 50 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
D
GDS
TO-220
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
S
FQP30N06L
60
32
22.6
128
± 20
350
32
7.9
7.0
79
0.53
-55 to +175
300
FQP30N06L
1.90
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
1
FQP30N06L Rev. C1
www.fairchildsemi.com
 

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