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1N5817WB View Datasheet(PDF) - Semtech Electronics LTD.

Part Name
Description
MFG CO.
1N5817WB
Semtech-Electronics
Semtech Electronics LTD. Semtech-Electronics
'1N5817WB' PDF : 2 Pages View PDF
1 2
1N5817WB-1N5819WB
1 A SURFACE MOUNT SCHOTTKY BARRIER DIODE
PINNING
PIN
1
2
1
DESCRIPTION
Cathode
Anode
2
Top View
Marking Code: 1N5817WB: A0
1N5818WB: ME
1N5819WB: SR
Simplified outline SOD-123 and symbol
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Reverse Voltage
1N5817WB
1N5818WB
1N5819WB
Average Forward Rectified Current
Non-Repetitive Peak Forward Surge Current
(8.3 ms Single Half Sine-Wave)
Power Dissipation
Operating Temperature Range
Storage Temperature Range
Symbol
Value
Unit
20
VR
30
V
40
IO
1
A
IFSM
25
A
Ptot
450
mW
Tj
- 55 to + 150
OC
TS
- 55 to + 150
OC
Characteristics at Ta = 25 OC
Parameter
Reverse Breakdown Voltage
at IR = 1 mA
Reverse Voltage Leakage Current
at VR = 20 V
at VR = 30 V
at VR = 40 V
at VR = 4 V
at VR = 6 V
Forward Voltage
at IF = 0.1 A
at IF = 1 A
at IF = 3 A
Diode Capacitance
at VR = 4 V, f = 1 MHz
Symbol
Min.
Max.
Unit
1N5817WB
1N5818WB
VBR
20
30
-
-
V
1N5819WB
40
-
1N5817WB
1N5818WB
1N5819WB
IR
1N5819WB
1N5819WB
-
1
-
-
1
1
mA
-
0.05
-
0.075
1N5819WB
1N5817WB
1N5818WB
1N5819WB
VF
1N5817WB
1N5818WB
1N5819WB
CD
-
0.45
-
0.45
-
0.55
-
0.6
V
-
0.75
-
0.875
-
0.9
-
120
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/12/2006
 

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