SIHFR1N60ATR-E3 View Datasheet(PDF) - Lucky Light Electronic
Part Name
Description
MFG CO.
'SIHFR1N60ATR-E3' PDF : 7 Pages View PDF
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Max.) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
600
VGS = 10 V
7.0
14
2.7
8.1
Single
D
DPAK
(TO-252)
IPAK
(TO-251)
G
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• Power Factor Correction
S
N-Channel MOSFET
TYPICAL SMPS TOPOLOGIES
• Low Power Single Transistor Flyback
ORDERING INFORMATION
Package
Lead (Pb)-free
DPAK (TO-252)
IRFR1N60APbF
SiHFR1N60A-E3
DPAK (TO-252)
IRFR1N60ATRLPbFa
SiHFR1N60ATL-E3a
SnPb
IRFR1N60A
-
SiHFR1N60A
-
Note
a. See device orientation.
DPAK (TO-252)
IRFR1N60ATRPbFa
SiHFR1N60AT-E3a
IRFR1N60ATRa
SiHFR1N60ATa
DPAK (TO-252)
IRFR1N60ATRRPbFa
SiHFR1N60ATR-E3a
-
-
IPAK (TO-251)
IRFU1N60APbF
SiHFU1N60A-E3
IRFU1N60A
SiHFU1N60A
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Currenta
TC = 25 °C
VGS at 10 V
ID
TC = 100 °C
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
EAS
Repetitive Avalanche Currenta
IAR
Repetitive Avalanche Energya
EAR
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
PD
dV/dt
LIMIT
600
± 30
1.4
0.89
5.6
0.28
93
1.4
3.6
36
3.8
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
- 55 to + 150
°C
300d
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 95 mH, RG = 25 Ω, IAS = 1.4 A (see fig. 12).
c. ISD ≤ 1.4 A, dI/dt ≤ 180 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
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