NE32500N
Datasheet PDF - California Eastern Laboratories.
Part Name
NE32500N
Other PDF
no available.
PDF
page
3 Pages
File Size
79.3 kB
MFG CO.
California Eastern Laboratories.
DESCRIPTION
NECs NE32500 is a Hetero-Junction FET chip that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise figure and high associated gain make it suitable for commercial systems and industrial applications.
NECs stringent quality assurance and test procedures assure the highest reliability and performance.
FEATURES
• SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz
• HIGH ASSOCIATED GAIN: 12.5 dB TYP at 12 GHz
• GATE LENGTH: LG = 0.20 µm
• GATE WIDTH: WG = 200 µm
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Part Name
Description
PDF
MFC CO.
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
NEC => Renesas Technology
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