MFG CO.
California Eastern Laboratories.
DESCRIPTION
The NE32584C is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also results in lower noise figure and high associated gain. This device is housed in an epoxy-sealed, metal/ceramic package and is intended for high volume consumer and industrial applications.
FEATURES
• VERY LOW NOISE FIGURE:
0.45 dB Typical at 12 GHz
• HIGH ASSOCIATED GAIN:
12.5 dB Typical at 12 GHz
• LG ≤ 0.20 µm, WG = 200 µm
• LOW COST METAL CERAMIC PACKAGE
• TAPE & REEL PACKAGING OPTION AVAILABLE
Part Name
Description
PDF
MFC CO.
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET ( Rev : 1998 )
NEC => Renesas Technology
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
NEC => Renesas Technology
SUPER LOW NOISE HJ FET
NEC => Renesas Technology
C BAND SUPER LOW NOISE HJ FET
NEC => Renesas Technology
2–18 GHz Ultra Low Noise Pseudomorphic HEMT
HP => Agilent Technologies
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NEC => Renesas Technology
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NEC => Renesas Technology
2-18 GHz Low Noise Pseudomorphic HEMT
HP => Agilent Technologies
L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET
NEC => Renesas Technology
X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NEC => Renesas Technology