MFG CO.
California Eastern Laboratories.
DESCRIPTION
NECs NE34018 is a low cost gallium arsenide Hetero-Junction FET housed in a miniature (SOT-343) plastic surface mount package. The device is fabricated using ion implantation for improved RF and DC performance, reliability, and uniformity. Its low noise figure, high gain, small size and weight make it an ideal low noise amplifier transistor in the 1- 3 GHz frequency range. The NE34018 is suitable for GPS, PCS, WLAN, MMDS, and other commercial applications.
NECs stringent quality assurance and test procedures ensure the highest reliability and performance.
FEATURES
• LOW COST MINIATURE PLASTIC PACKAGE (SOT-343)
• LOW NOISE FIGURE: 0.6 dB typical at 2 GHz
• HIGH ASSOCIATED GAIN: 16.0 dB typical at 2 GHz
• LG = 0.6 µm, WG = 400 µm
• TAPE & REEL PACKAGING
Part Name
Description
PDF
MFC CO.
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NEC => Renesas Technology
L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET
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L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
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L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
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L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT
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L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT ( Rev : 1999 )
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3 W L-BAND POWER GaAs HJ-FET
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0.4 W L-BAND POWER GaAs HJ-FET
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1 W L-BAND POWER GaAs HJ-FET
NEC => Renesas Technology
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
NEC => Renesas Technology