General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
Features
• –0.6 A, –20 V. RDS(ON)= 0.40 Ω@ VGS= –4.5 V
RDS(ON)= 0.55 Ω@ VGS= –2.5 V
RDS(ON)= 0.80 Ω@ VGS= –1.8 V
•Low gate charge
• High performance trench technology for extremely low RDS(ON)
• Compact industry standard SC70-6 surface mount package
Applications
•Battery management
•Load switch
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