General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
Features
· –2.4 A, –20 V. RDS(ON) = 52 mW @ VGS = –4.5 V
RDS(ON) = 70 mW @ VGS = –2.5 V
RDS(ON) = 100 mW @ VGS = –1.8 V
· Fast switching speed
· ESD protection diode
· High performance trench technology for extremely low RDS(ON)
· SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint
Applications
· Battery management
· Load switch
· Battery protection
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