General Description
This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion.
Features
■ -1.3 A, -20 V. RDS(ON) = 0.20 W @ VGS = -4.5 V
RDS(ON) = 0.27 W @ VGS= -2.5 V.
■ Low gate charge (3.6 nC typical).
■ High performance trench technology for extremely low
RDS(ON).
■ High power version of industry standard SOT-23 package.
■ Identical pin out to SOT-23 with 30% higher power handling
capability.
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