General Description
This P -Channel  Logic Level  MOSFET is produced using FairchildSemiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switchingperformance.

Feature s
·  –2A, 20 V   RDS(ON)= 70 mW@ VGS= –4.5 V
                  RDS(ON)= 110 mW@ VGS= –2.5 V
·  Low gate charge (7.2 nC typical).
·  High performance trench technology for extremely low R DS(ON).
·  High power version of industry Standard SOT-23 package.Identical pin-out to SOT-23 with 30%
higher power handling ca pability.