General Description
This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features
• Q1: N-Channel
4.5 A, 60 V
RDS(on) = 55 mΩ @ VGS = 10V
RDS(on) = 75 mΩ @ VGS = 4.5V
• Q2: P-Channel
–3.5 A, –60 V
RDS(on) = 105 mΩ @ VGS = –10V
RDS(on) = 135 mΩ @ VGS = –4.5V
• Qualified to AEC Q101
• RoHS Compliant
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