General Description
This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional switching PWM controllers, and battery chargers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON)specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
–6.9 A, –30 V. RDS(ON)= 22 m:@ VGS= –10 V
RDS(ON)= 35 m:@ VGS= – 4.5 V
Extended VGSSrange (–25V) for battery applications
ESD protection diode (note 3)
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
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