General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
Features
• 14 A, 30 V. RDS(ON) = 7.5 mΩ @ VGS = 10 V RDS(ON) = 9.0 mΩ @ VGS = 4.5 V
• Low gate charge (22 nC typical)
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability
Applications
• DC/DC converter
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