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FDZ191P_0612

  

Datasheet PDF - Fairchild Semiconductor

FDZ191P_0612 image

Part Name
FDZ191P_0612

Other PDF
  no available.

PDF

page
7 Pages

File Size
264.5 kB

MFG CO.
Fairchild
Fairchild Semiconductor 

General Description
Designed on Fairchilds advanced 1.5V PowerTrench process with state of the art "low pitch" WLCSP packaging process, the FDZ191P minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on).

Features
■ Max rDS(on) = 85mΩ at VGS = -4.5V, ID = -1A
■ Max rDS(on) = 123mΩ at VGS = -2.5V, ID = -1A
■ Max rDS(on) = 200mΩ at VGS = -1.5V, ID = -1A
■ Occupies only 1.5 mm2 of PCB area Less than 50% of the area of 2 x 2 BGA
■ Ultra-thin package: less than 0.65 mm height when mounted to PCB
■ RoHS Compliant

Application
■ Battery management
■ Load switch
■ Battery protection


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