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FDZ202P

  

Datasheet PDF - Fairchild Semiconductor

FDZ202P image

Part Name
FDZ202P

Other PDF
  1999  

PDF

page
6 Pages

File Size
161.5 kB

MFG CO.
Fairchild
Fairchild Semiconductor 

General Description
Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ202P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON).
   
Features
• –5.5 A, –20 V. RDS(ON) = 45 mΩ @ VGS = –4.5 V
                          RDS(ON) = 75 mΩ @ VGS = –2.5 V
• Occupies only 5 mm2 of PCB area: only 55% of the
    area of SSOT-6
• Ultra-thin package: less than 0.80 mm height when
    mounted to PCB
• Outstanding thermal transfer characteristics:
    4 times better than SSOT-6
• Ultra-low Qg x RDS(ON) figure-of-merit
• High power and current handling capability
   
Applications
• Battery management
• Load switch
• Battery protection
   


Part Name
Description
PDF
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