MFG CO.
Fairchild Semiconductor
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Features
• 13.5 A, 500 V, RDS(on) = 480 mΩ (Max.) @ VGS = 10 V,
ID = 6.75 A
• Low Gate Charge (Typ. 43 nC)
• Low Crss (Typ. 20 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
Part Name
Description
PDF
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