K04N60
Datasheet PDF - Infineon Technologies
Part Name
K04N60
Description
Other PDF
PDF
page
13 Pages
File Size
457.2 kB
MFG CO.
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
• 75% lower Eoff compared to previous generation combined with low conduction losses
• Short circuit withstand time – 10 s
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Very soft, fast recovery anti-parallel Emitter Controlled
Diode
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
|
|
Part Name
Description
PDF
MFC CO.
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Unspecified
650V, 20A Alpha IGBT With soft and fast recovery anti-parallel diode
Alpha and Omega Semiconductor
650V, 5A Alpha IGBT With soft and fast recovery anti-parallel diode
Alpha and Omega Semiconductor
650V, 5A Alpha IGBT With soft and fast recovery anti-parallel diode
Alpha and Omega Semiconductor
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
Unspecified
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
Unspecified
650V, 7A Alpha IGBT™ With soft and fast recovery anti-parallel diode
Alpha and Omega Semiconductor
650V, 20A Alpha IGBT ™ With soft and fast recovery anti-parallel diode
Alpha and Omega Semiconductor
1200V, 20A Alpha IGBT ™ With soft and fast recovery anti-parallel diode
Alpha and Omega Semiconductor
Share Link: 
