NE4210M01-T2
Datasheet PDF - NEC => Renesas Technology
Part Name
NE4210M01-T2
Other PDF
no available.
PDF
page
12 Pages
File Size
63.2 kB
MFG CO.
NEC => Renesas Technology
DESCRIPTION
The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.
FEATURES
• Super Low Noise Figure & High Associated Gain
NF = 0.8 dB TYP., Ga = 11 dB TYP. at f = 12 GHz
• 6pin super minimold package
• Gate Width: Wg = 200µm
|
|
Part Name
Description
PDF
MFC CO.
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
California Eastern Laboratories.
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
California Eastern Laboratories.
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
California Eastern Laboratories.
NEC's C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP
California Eastern Laboratories.
GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)
California Eastern Laboratories.
GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)
California Eastern Laboratories.
Share Link: 
