MJ11012
Datasheet PDF - New Jersey Semiconductor
Part Name
MJ11012
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2 Pages
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MFG CO.
New Jersey Semiconductor
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
..designed for use as output devices in complementary general purpose amplifier applications.
FEATURES:
* High Gain Darlington Performance
* High DCCurrent Gain hFE = 1000(Min) @ lc = 20A
* Monolithic Construction with Built-in Base-Emitter Shunt Resistor
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MFC CO.
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