N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
■ TYPICAL RDS(on)= 0.075Ω
■ HIGH CURRENT POWER MODULE
■ AVALANCHE RUGGED TECHNOLOGY
■ VERY LARGE SOA - LARGE PEAK POWER CAPABILITY
■ EASY TO MOUNT
■ SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS
■ EXTREMELY LOW Rth (Junction to case)
■ VERY LOW INTERNAL PARASITIC INDUCTANCE
■ ISOLATED PACKAGE UL RECOGNIZED
APPLICATIONS
■ SMPS & UPS
■ MOTOR CONTROL
■ WELDING EQUIPMENT
■ OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS
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