Description
The N0600N is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features
•  Low on-state resistance
  ⎯ RDS(on)1= 25 mΩMAX. (VGS=10 V, ID= 15 A)
  ⎯ RDS(on)2= 36 mΩMAX. (VGS= 4.5 V, ID= 15 A)
•  Low input capacitance
  ⎯ Ciss= 1380 pF TYP. (VDS= 10 V, VGS= 0 V)