MFG CO.
STMicroelectronics
DESCRIPTION
This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturingreproducibility.
■ TYPICAL RDS(on) = 0.09 Ω
■ AVALANCHERUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ 175oC OPERATING TEMPERATURE
■ HIGH dV/dt CAPABILITY
■ APPLICATION ORIENTED CHARACTERIZATION
APPLICATIONS
■ DC MOTOR CONTROL
■ DC-DC & DC-AC CONVERTERS
■ SYNCHRONOUS RECTIFICATION
Part Name
Description
PDF
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