STU11NM60ND
Datasheet PDF - STMicroelectronics
Part Name
STU11NM60ND
Description
Other PDF
PDF
page
19 Pages
File Size
728 kB
MFG CO.
STMicroelectronics
Description
The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
Features
■ The worldwide best RDS(on)* area amongst the
fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche
capabilities
Application
Switching applications
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Part Name
Description
PDF
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