2SC3076Y Datasheet PDF Toshiba

Home >>> Toshiba >>> 2SC3076Y Datasheet

2SC3076Y

Datasheet PDF - Toshiba

Part Name

2SC3076Y

Description

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

Other PDF

2005 lastest PDF

PDF

DOWNLOAD

page

5 Pages

File Size

153.5 kB

MFG CO.

Toshiba

Power Amplifier Applications
Power Switching Applications

• Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
• Excellent switching time: tstg = 1.0 μs (typ.)
• Complementary to 2SA1241

Part Name

Description

PDF

MFC CO.

2SC4667

TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)

View

Unspecified

2SC3324

Silicon NPN Epitaxial Type (PCT process) Transistor

View

TY Semiconductor

2SD1220

Silicon NPN Epitaxial Type (PCT Process) Transistor

View

TY Semiconductor

2SD1220

Silicon NPN Epitaxial Type (PCT Process) Transistor

View

TY Semiconductor

2SC3007

SILICON NPN EPITAXIAL TYPE (PCT PROCESS)

View

Unspecified

2SC2194A

SILICON NPN EPITAXIAL TYPE (PCT PROCESS)

View

Inchange Semiconductor

2SC2565

SILICON NPN EPITAXIAL TYPE (PCT PROCESS)

View

Unspecified

KTC2383

SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS)

View

KEC

2SC3203

SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)

View

KEC

KTC2120

SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS)

View

KEC

Share Link: