MFG CO.
Intersil
This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.
Features
• 5.5A, 400V
• rDS(ON) = 1.000Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Part Name
Description
PDF
MFC CO.
3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET
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New Jersey Semiconductor
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Fairchild Semiconductor
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Unisonic Technologies
5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET® Power MOSFET
Fairchild Semiconductor
5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET® Power MOSFET
Fairchild Semiconductor
5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Fairchild Semiconductor