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F1206

  

Datasheet PDF - Polyfet RF Devices

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Part Name
F1206

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2 Pages

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28.5 kB

MFG CO.
Polyfet-RF
Polyfet RF Devices 

General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance


Part Name
Description
PDF
MFC CO.
RF POWER VDMOS TRANSISTOR
Advanced Semiconductor
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
Motorola => Freescale
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
Motorola => Freescale
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
N−Channel Enhancement−Mode Silicon Gate
ON Semiconductor
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
Motorola => Freescale
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR ( Rev : V2 )
New Jersey Semiconductor
N-Channel Enhancement-Mode Silicon Gate TMOS Power FET
Motorola => Freescale
Enhancement Mode Power Transistor
Espros Photonics corp

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