General Description
This  P-Channel  MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.It has been optimized for power management applications with a wide range of gate drive voltage (2.5V –12V).

Features
·  –5A, –20 V,  RDS(ON)= 55 mW@ VGS= –4.5 V
                    RDS(ON)= 90 mW@ VGS= –2.5 V
·  Extended VGSSrange (±12V) for battery applications
·  Low gate charge
·  High performance trench technology for extremely low RDS(ON)
·  High power and current handling capability